Electronic Transport in InAs/AlSb Superlattices with Electric Domains

The series of almost voltage-periodic maxima found earlier in current–voltage characteristics of InAs/AlSb superlattices (SLs) at the voltage range of domain formation is studied. These oscillations are examined in InAs/AlSb SLs with different quantum well (QW) widths. It is found that the periodic...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2022-07, Vol.67 (7), p.882-883
Main Authors: Altukhov, I. V., Dizhur, S. E., Kagan, M. S., Paprotskiy, S. K., Khvalkovskiy, N. A., Il’inskaya, N. D., Usikova, A. A., Baranov, A. N., Teissier, R.
Format: Article
Language:English
Subjects:
Communications Engineering
Current voltage characteristics
Domains
Electric fields
Electron transport
Engineering
Nanoelectronics
Networks
Quantum wells
Superlattices
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Summary:The series of almost voltage-periodic maxima found earlier in current–voltage characteristics of InAs/AlSb superlattices (SLs) at the voltage range of domain formation is studied. These oscillations are examined in InAs/AlSb SLs with different quantum well (QW) widths. It is found that the periodic changes of current in SLs with wide QW widths are caused by jumps of domain boundary between adjacent QWs. The considerably larger oscillation periods in narrow-QW SLs are supposed to be the result of considerable increase in the peak electric field inside the triangular domain which makes possible optical phonon-assisted tunneling between neighboring QWs.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226922070026