Observation of gamma radiation-induced defects in radiation-intolerant and radiation-tolerant Si/SiO2 by electron spins resonance and quantitative interpretation

The gamma radiation-induced defects in radiation intolerant and radiation tolerant Si/SiO 2 were observed by electron spin resonance (ESR). The P b and È defects appeared in radiation-intolerant Si/SiO 2 after radiation, but only P b defects appeared in radiation-tolerant Si/SiO 2 before and after r...

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Bibliographic Details
Published in:Radiation effects and defects in solids 2022-08, Vol.177 (7-8), p.620-628
Main Authors: Congling, Xi, Changshi, Liu
Format: Article
Language:English
Subjects:
defect
Defects
dose
Electron paramagnetic resonance
Electron spin
electron spin resonance
Gainamma radiation
Gamma rays
Oxidation
Radiation dosage
Radiation effects
Relaxation time
Resonance
Si
Si/SiO
Silicon dioxide
Spin resonance
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Summary:The gamma radiation-induced defects in radiation intolerant and radiation tolerant Si/SiO 2 were observed by electron spin resonance (ESR). The P b and È defects appeared in radiation-intolerant Si/SiO 2 after radiation, but only P b defects appeared in radiation-tolerant Si/SiO 2 before and after radiation. The experimental results showed that these defects were correlated with the way of oxidation, the dosage of 60 Co radiation and the electrical bias field during radiation. The higher the radiation dosage, the higher the defect concentration. A quantitative relationship was found between defect concentration and radiation dosage. Besides, the △B (peak to peak) of P b and È indicated that P b is the defect with a slow electron spin relaxation time, while È is the defect with a fast electron spin relaxation time. Finally, the experimental results are explained qualitatively.
ISSN:1042-0150
1029-4953
DOI:10.1080/10420150.2022.2073876