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DEPOSITION OF PtxIr(1–x) FILM STRUCTURES BY MOCVD FROM A COMBINATION OF PRECURSORS Me3Pt(acac)Py AND Ir(CO)2(acac)

MOCVD processes of the deposition of Pt x Ir (1– x ) films in the presence of H 2 and O 2 in the temperature range 260-300 °C on Si and Ti substrates using a combination of precursors Me 3 Pt(acac)Py and Ir(CO) 2 (acac) (acac = acetylacetonato(-), Py = pyridine) are studied. According to the powder...

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Bibliographic Details
Published in:Journal of structural chemistry 2022, Vol.63 (7), p.1134-1144
Main Authors: Dorovskikh, S. I., Karakovskaya, K. I., Vikulova, E. S., Korolkov, I. V., Koretskaya, T. P., Maximovskiy, E. A., Morozova, N. B.
Format: Article
Language:English
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Summary:MOCVD processes of the deposition of Pt x Ir (1– x ) films in the presence of H 2 and O 2 in the temperature range 260-300 °C on Si and Ti substrates using a combination of precursors Me 3 Pt(acac)Py and Ir(CO) 2 (acac) (acac = acetylacetonato(-), Py = pyridine) are studied. According to the powder XRD data, the films are usually solid solutions with the Pt x Ir (1– x ) composition. The samples prepared in the presence of O 2 show the minimal contents of impurities, homogeneous composition, and the Pt:Ir ratio close to the one experimentally specified. In the presence of H 2 , Ir-enriched Pt x Ir (1– x ) layers with a non-uniform distribution of metals over the thickness are formed in the temperature range 280-300 °C. The surface of Pt x Ir (1– x ) film structures prepared in the presence of hydrogen is formed by small (up to 10 nm in size) particles or 20-32 nm large particle agglomerates prepared in the presence of oxygen. The Pt x Ir (1– x ) layers have a predominantly columnar structure. The structure of films deposited in an oxygen atmosphere is less dense than that of the layers synthesized under similar conditions in a hydrogen atmosphere. The thickness of the films prepared in H 2 or O 2 falls within intervals 300-450 nm and 750-800 nm, respectively.
ISSN:0022-4766
1573-8779
DOI:10.1134/S0022476622070083