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DEPOSITION OF PtxIr(1–x) FILM STRUCTURES BY MOCVD FROM A COMBINATION OF PRECURSORS Me3Pt(acac)Py AND Ir(CO)2(acac)
MOCVD processes of the deposition of Pt x Ir (1– x ) films in the presence of H 2 and O 2 in the temperature range 260-300 °C on Si and Ti substrates using a combination of precursors Me 3 Pt(acac)Py and Ir(CO) 2 (acac) (acac = acetylacetonato(-), Py = pyridine) are studied. According to the powder...
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Published in: | Journal of structural chemistry 2022, Vol.63 (7), p.1134-1144 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | MOCVD processes of the deposition of Pt
x
Ir
(1–
x
)
films in the presence of H
2
and O
2
in the temperature range 260-300 °C on Si and Ti substrates using a combination of precursors Me
3
Pt(acac)Py and Ir(CO)
2
(acac) (acac = acetylacetonato(-), Py = pyridine) are studied. According to the powder XRD data, the films are usually solid solutions with the Pt
x
Ir
(1–
x
)
composition. The samples prepared in the presence of O
2
show the minimal contents of impurities, homogeneous composition, and the Pt:Ir ratio close to the one experimentally specified. In the presence of H
2
, Ir-enriched Pt
x
Ir
(1–
x
)
layers with a non-uniform distribution of metals over the thickness are formed in the temperature range 280-300 °C. The surface of Pt
x
Ir
(1–
x
)
film structures prepared in the presence of hydrogen is formed by small (up to 10 nm in size) particles or 20-32 nm large particle agglomerates prepared in the presence of oxygen. The Pt
x
Ir
(1–
x
)
layers have a predominantly columnar structure. The structure of films deposited in an oxygen atmosphere is less dense than that of the layers synthesized under similar conditions in a hydrogen atmosphere. The thickness of the films prepared in H
2
or O
2
falls within intervals 300-450 nm and 750-800 nm, respectively. |
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ISSN: | 0022-4766 1573-8779 |
DOI: | 10.1134/S0022476622070083 |