Eu2P2S6: The First Rare‐Earth Chalcogenophosphate Exhibiting Large Second‐Harmonic Generation Response and High Laser‐Induced Damage Threshold

• Published in: Angewandte Chemie International Edition 2022-08, Vol.61 (32), p.n/a
• Main Authors: Huang, Xiao, Yang, Si‐Han, Li, Xiao‐Hui, Liu, Wenlong, Guo, Sheng‐Ping
• Format: Article
• Language: English
• Subjects: Chalcogenophosphate; Crystal Structure; Dimers; Earth; Europium; Harmonic generations; Laser damage; Laser-Induced Damage Threshold; Molecular structure; Nonlinear Optics; Prisms; Silver gallium sulfide; Yield point
• ISSN: 1433-7851; 1521-3773
• DOI: 10.1002/anie.202206791

Metal chalcogenophosphates are receiving increasing interest, specifically as promising infrared nonlinear optical (NLO) candidates. Here, a rare‐earth chalcogenophosphate Eu2P2S6 crystallizing in the monoclinic noncentrosymmetric space group Pn was synthesized using a high‐temperature solid‐state method. Its structure features isolated [P2S6]4− dimer, and two types of EuS8 bicapped triangular prisms. Eu2P2S6 exhibits a phase‐matchable second‐harmonic generation (SHG) response ≈0.9×AgGaS2@2.1 μm, and high laser‐induced damage threshold of 3.4×AgGaS2, representing the first rare‐earth NLO chalcogenophosphate. The theoretical calculation result suggests that the SHG response is ascribed to the synergetic contribution of [P2S6]4− dimers and EuS8 bicapped triangular prisms. This work provides not only a promising high‐performance infrared NLO material, but also opens the avenue for exploring rare‐earth chalcogenophosphates as potential IR NLO materials. Eu2P2S6 exhibits excellent NLO properties, including a phase‐matchable second‐harmonic generation (SHG) response ≈0.9×AgGaS2@2.1 μm, and a high laser‐induced damage threshold of 3.4×AgGaS2. Eu2P2S6 is the first NLO‐active rare‐earth‐based chalcogenophosphate.