AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for Mid-Infrared Detection

We report AlInAsSb separate absorption, charge, and multiplication (SACM) avalanche photodiodes with a >3- \mu \text{m} optical cutoff, operating at 240 K. Gain and dark current performance further improve with reduced temperature. 65% external quantum efficiency at 2- \mu \text{m} is achieved...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2022-08, Vol.58 (4), p.1-6
Main Authors: Jones, Andrew H., March, Stephen D., Dadey, Adam A., Muhowski, Aaron J., Bank, Seth R., Campbell, Joe C.
Format: Article
Language:English
Subjects:
Avalanche diodes
Avalanche photodiodes
Dark current
Electric fields
Impact ionization
infrared
mid-infrared
Multiplication
Photodetectors
Photodiodes
Photonic band gap
Quantum efficiency
Tunneling
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Summary:We report AlInAsSb separate absorption, charge, and multiplication (SACM) avalanche photodiodes with a >3- \mu \text{m} optical cutoff, operating at 240 K. Gain and dark current performance further improve with reduced temperature. 65% external quantum efficiency at 2- \mu \text{m} is achieved without anti-reflection enhancement.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2022.3149532