Loading…

Electric measurements of PV heterojunction structures a-SiC/c-Si

Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also...

Full description

Saved in:
Bibliographic Details
Published in:Journal of Electrical Engineering 2018-01, Vol.69 (1), p.52-57
Main Authors: Perný, Milan, Šály, Vladimír, Janíček, František, Mikolášek, Miroslav, Váry, Michal, Huran, Jozef
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.
ISSN:1339-309X
1335-3632
1339-309X
DOI:10.1515/jee-2018-0007