Impact of Solder Degradation on V CE of IGBT Module: Experiments and Modeling

Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electrothermal coupling in the IGBT module, solder degradation also affects electrical ch...

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Bibliographic Details
Published in:IEEE journal of emerging and selected topics in power electronics 2022-08, Vol.10 (4), p.4536-4545
Main Authors: Jia, Yingjie, Huang, Yongle, Xiao, Fei, Deng, Hongfei, Duan, Yaoqiang, Iannuzzo, Francesco
Format: Article
Language:English
Subjects:
Accelerated aging tests
Coupling
Degradation
Failure modes
Finite element method
Image processing
Insulated gate bipolar transistors
Modules
Ohm's Law
Semiconductor devices
Solders
Thermal resistance
Three dimensional models
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Summary:Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electrothermal coupling in the IGBT module, solder degradation also affects electrical characteristics, such as ON-state voltage [Formula Omitted]. The impact mechanism of solder degradation on [Formula Omitted] is analyzed in this paper first. For the study of the solder degradation independently, a press-packing setup is designed for the accelerated aging test, which can remove the influence of bond wires degradation and significantly improve the experimental efficiency. Then, the IGBT equivalent resistance is defined, which conforms to Ohm’s law in the calculation and can respond to the real-time dynamic current. So, it could be conveniently used in the finite element method (FEM)-based simulation. Meanwhile, a realistic 3-D degradation model of the solder layer is constructed by an image processing method. Furthermore, an electrothermal coupling model based on the finite element is constructed to study the impact of solder degradation on the electrical and thermal characteristics of IGBT. Finally, the proposed degradation mechanism is verified by simulation and experimental results.
ISSN:2168-6777
2168-6785
DOI:10.1109/JESTPE.2019.2928478