Loading…
Structural, magnetic and transport properties of Co\(_2\)CrAl epitaxial thin films
We report the physical properties of Co\(_2\)CrAl Heusler alloy epitaxial thin films grown on single crystalline MgO(001) substrate using pulsed laser deposition technique. The x-ray diffraction pattern in \(\theta\)-2\(\theta\) mode showed the film growth in single phase B2-type ordered cubic struc...
Saved in:
Published in: | arXiv.org 2022-08 |
---|---|
Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | We report the physical properties of Co\(_2\)CrAl Heusler alloy epitaxial thin films grown on single crystalline MgO(001) substrate using pulsed laser deposition technique. The x-ray diffraction pattern in \(\theta\)-2\(\theta\) mode showed the film growth in single phase B2-type ordered cubic structure with the presence of (002) and (004) peaks, and the film oriented along the MgO(001) direction. The \(\phi\)~scan along the (220) plane confirms the four-fold symmetry and the epitaxial growth relation found to be Co\(_2\)CrAl(001)[100]$\vert$$\vert\(MgO(001)[110]. The thickness of about 12~nm is extracted through the analysis of x-ray reflectivity data. The isothermal magnetization (M--H) curves confirm the ferromagnetic (FM) nature of the thin film having significant hysteresis at 5 and 300~K. From the in-plane M--H curves, the saturation magnetization values are determined to be 2.1~\)\mu$$_{\rm B}\(/f.u.~at 5~K and 1.6~\)\mu$$_{\rm B}\(/f.u. at 300~K, which suggests the soft FM behavior in the film having the coercive field \)\approx\( 522~Oe at 5~K. The thermo-magnetization measurements at 500~Oe magnetic field show the bifurcation between field-cooled and zero-field-cooled curves below about 100~K. The normalized field-cooled magnetization curve follows the T\)^2\( dependency, and the analysis reveal the Curie temperature around 335\)\pm\(11~K. Moreover, the low-temperature resistivity indicates semiconducting behavior with the temperature, and we find a negative temperature coefficient of resistivity (5.2 \)\times\( 10\)^{-4}$ /K). |
---|---|
ISSN: | 2331-8422 |