Enhancement of photoelectric properties of Cu2ZnSnS4 thin films by electronic excitations induced by swift heavy ions

•AFM and SEM images confirm the morphological changes in the irradiated sample.•Micro-Raman spectra reveal the presence of lattice defects in the Au irradiated sample.•UV–Vis results reveal a red-shift in absorbance spectra after O irradiation.•Maximum photosensitivity is found to be 62% for O irrad...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2022-06, Vol.280, p.115683, Article 115683
Main Authors: Sampath, M., Logu, T., Mathan Kumar, P., Asokan, K., Sethuraman, K.
Format: Article
Language:English
Subjects:
Copper zinc tin sulfide
Crystal defects
Crystallites
Cu2ZnSnS4 thin films
Current voltage characteristics
Diffraction patterns
Excitation
Gold
Heavy ions
Ion beams
Ion irradiation
Photoelectric effect
Photoelectric property
Photoelectricity
Photosensitivity
Raman spectra
Silver
Spray pyrolysis
Swift Heavy Ion Irradiation
Thin films
Titanium nitride
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Summary:•AFM and SEM images confirm the morphological changes in the irradiated sample.•Micro-Raman spectra reveal the presence of lattice defects in the Au irradiated sample.•UV–Vis results reveal a red-shift in absorbance spectra after O irradiation.•Maximum photosensitivity is found to be 62% for O irradiated thin films. The structural, optical, and current–voltage characteristics including photosensitivity of copper zinc tin sulphide (Cu2ZnSnS4) thin films were modified significantly by the electronic excitations. These excitations were induced by swift heavy ion (SHI) beams of 100 –120 MeV of O, Ag, and Au. X-ray diffraction patterns confirm that the pristine and irradiated films crystallize in kesterite structure and the crystallite size increases after O, and Ag ion irradiations compared to Au ions. The micro-Raman spectra reveal the presence of lattice defects in the Au irradiated sample. The analysis shows that the crystallinity of the Cu2ZnSnS4 thin film increases with O ion irradiation indicating that the density of defect states decreases after SHI irradiation. The maximum photosensitivity is found to be 62% for O irradiated thin films compared to other ion beams due to the reduction in the band gap.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2022.115683