Photodetector properties of [perovskite - porous silicon] heterojunction

• Main Authors: Ali, Ali Mohammed, Ghazi, Rusul A., Kadhim, Bahjat B.
• Format: Conference Proceeding
• Language: English
• Subjects: Aluminum; Chemical synthesis; Electric potential; Electrical measurement; Energy bands; Energy gap; Heterojunctions; Lead compounds; Metal halides; Nanoparticles; Optical measurement; Perovskites; Photoluminescence; Photometers; Polytetrafluoroethylene; Porous silicon; Silicon substrates; Silicon wafers; Thin films; Titanium dioxide; Voltage
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/5.0093379

Tn this paper, methyl ammonium lead halide perovskite (CH3NH3PbT3) nanoparticles prepare by the hydrothermal method. Thin films fabrication by deposition on the porous silicon substrate, with employment of drop casting method, then prepared of (CH3NH3PbT3) NPs solution. Porous silicon (PSi) substrate fabricated and used as a substrate, by using p - type of silicon wafers (p-Si) in the aid of utilized Teflon chemical cell with a fixed synthesis parameters at etching time (10 min) and current density (10 mA/cm2). The heterojunction [Al/TiO2/ CH3NH3PbT3/PSi/p- Si/Al] was fabricated by depositing process. Optical measurements were calculated from photoluminescence spectra within the range (300-900) nm, to estimate the energy band gap of CH3NH3PbT3 NPs which was found (1.75 - 1.85) eV for the concentration prepared. The electrical measurements current - voltage (T-V) characterization were examined in dark and illumination conditions, for the heterojunction. The current increased with increasing the voltage in case of forward bias. Photodetector application for the heterojunction [Al/TiO2/ CH3NH3PbT3/PSi/p-Si/Al] was characteristic by two peaks of spectral responsitivity in range (400-1000) nm, the highest spectral responsitivity value for heterojunctions prepared (1.95) A/W. And the specific detectivity values was found equal to (32 x1012) cm Hz1/2 W−1.