Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

•AlN/GaN layers alternation allows to grow crack-free GaN layers by NH3-MBE.•GaN layers grown under the same growth conditions on Al2O3 and Si substrates have the same surface morphology.•Dislocation density in GaN layers grown on Si substrate up to 5 times higher than in GaN layers on Al2O3 substra...

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Bibliographic Details
Published in:Journal of crystal growth 2022-06, Vol.588, p.126669, Article 126669
Main Authors: Malin, Timur, Milakhin, Denis, Mansurov, Vladimir, Vdovin, Vladimir, Kozhukhov, Anton, Loshkarev, Ivan, Aleksandrov, Ivan, Protasov, Dmitry, Zhuravlev, Konstantin
Format: Article
Language:English
Subjects:
A1. Electron mobility
A1. Surface morphology
A1. Threading dislocation
A3. Ammonia-MBE
Aluminum gallium nitrides
Ammonia
B2. AlGaN/GaN on sapphire
B2. AlGaN/GaN on silicon
Buffer layers
Comparative studies
Dislocation density
Electron mobility
Epitaxial growth
Gallium nitrides
Heterostructures
Molecular beam epitaxy
Parameters
Sapphire
Silicon substrates
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Summary:•AlN/GaN layers alternation allows to grow crack-free GaN layers by NH3-MBE.•GaN layers grown under the same growth conditions on Al2O3 and Si substrates have the same surface morphology.•Dislocation density in GaN layers grown on Si substrate up to 5 times higher than in GaN layers on Al2O3 substrate.•2DEG electron mobility in AlGaN/GaN heterostructures on Si substrate 30% lower than in HES on Al2O3 substrate. A comparative study of the structural properties of GaN layers and the electrophysical parameters of 2DEG in AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates using identical buffer layer designs has been carried out. It is demonstrated that GaN layers grown under the same growth conditions have the similar surface morphology, regardless of the substrate material. It is shown that the dislocation density of compressed GaN layers grown on sapphire substrates up to 5 times lower than in crack-free and stretched GaN layers grown on silicon substrates. The measured values of electron mobility in heterostructures with 2DEG grown on sapphire substrates are higher by 30% than on silicon substrates (∼1600 cm2/V × s and ∼1200 cm2/V × s).
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2022.126669