Investigation of role of antisite disorder in the pristine cage compound FeGa\(_3\)

The role of controlled disorder in the strong correlated narrow gap semiconductor candidate FeGa\(_3\) has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations of the occupation number of Fe and Ga sites...

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Bibliographic Details
Published in:arXiv.org 2023-03
Main Authors: C Kaufmann Ribeiro, Mello, L, Martelli, V, Cornejo, D, Silva Neto, M B, Fogh, E, Rønnow, H M, J Larrea Jiménez
Format: Article
Language:English
Subjects:
Annealing furnaces
Cage compounds
Gallium
Insulators
Melting furnaces
Metal-insulator transition
X ray analysis
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Summary:The role of controlled disorder in the strong correlated narrow gap semiconductor candidate FeGa\(_3\) has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations of the occupation number of Fe and Ga sites from those expected in the pristine compound were quantified with X-ray analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa\(_3\) from paramagnetic semiconducting to a magnetic metal. These findings are discussed within the framework of Anderson metal-insulator transitions and spin fluctuations.
ISSN:2331-8422