Electrically Tunable Plasmonic Absorber Based on Cu-ITO Subwavelength Grating on SOI at Telecom Wavelength

An electrically controlled optical absorption is numerically proposed in a plasmonic waveguide on silicon-on-insulator (SOI) consisting of copper-indium tin oxide (ITO) based subwavelength grating at 1.55 µm wavelength. The Cu-ITO subwavelength grating in a form of a discontinuous Cu layer filled wi...

Full description

Saved in:
Bibliographic Details
Published in:Plasmonics (Norwell, Mass.) Mass.), 2022-08, Vol.17 (4), p.1709-1716
Main Authors: Pandey, Suresh Kumar, Rajput, Swati, Kaushik, Vishal, Babu, Prem, Dev Mishra, Rahul, Kumar, Mukesh
Format: Article
Language:English
Subjects:
Absorption
Biochemistry
Biological and Medical Physics
Biophysics
Biotechnology
Carrier density
Chemistry
Chemistry and Materials Science
Copper
Indium tin oxides
Low voltage
Nanotechnology
Plasmonics
SOI (semiconductors)
Telecommunications
Waveguides
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An electrically controlled optical absorption is numerically proposed in a plasmonic waveguide on silicon-on-insulator (SOI) consisting of copper-indium tin oxide (ITO) based subwavelength grating at 1.55 µm wavelength. The Cu-ITO subwavelength grating in a form of a discontinuous Cu layer filled with ITO together with electrically tunable permittivity of ITO provides us with a tunable absorption and efficient guidance of plasmonic mode. An n-type ITO is used which exhibits a significant change in the carrier concentration with the applied voltage resulting in a change in optical absorption at a telecom wavelength of 1.55 µm. We numerically observe maximum tuning in absorption at a grating period of 600 nm and a duty cycle of 50%. The proposed device shows a smaller effective mode area of Am = 0.01421/µm2 and a plasmonic confinement factor of 34.67%. The device is reported to have an extinction ratio of 10.28 dB for a 100-µm-long device at a low voltage of 6 V.
ISSN:1557-1955
1557-1963
DOI:10.1007/s11468-022-01658-z