Study on Residual Image in Low-Temperature Poly-Si Oxide TFT-Based OLED Display on Polyimide Substrate

We study the reduction in residual image in low-temperature poly-Si oxide (LTPO) thin-film transistor (TFT)-based flexible organic light-emitting diode (OLED) displays on polyimide (PI) substrate. Conventional voltage compensation circuit (seven TFTs plus one capacitor) is used with modification of...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2022-09, Vol.69 (9), p.4958-4961
Main Authors: Jeon, Chang Hoon, Kwon, Kyung Joon, Hong, Soon Kwang, Ha, Yong Min, Kim, Hyunho, Jang, Jin
Format: Article
Language:English
Subjects:
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">V TH compensation pixel circuit
Capacitance
Charging
Circuits
Electric potential
Logic gates
Low temperature
Low-temperature poly-Si oxide (LTPO)
Organic light emitting diodes
polyimide (PI)
Polysilicon
residual image
Semiconductor devices
Shielding
Stress
Substrates
Switches
Thin film transistors
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We study the reduction in residual image in low-temperature poly-Si oxide (LTPO) thin-film transistor (TFT)-based flexible organic light-emitting diode (OLED) displays on polyimide (PI) substrate. Conventional voltage compensation circuit (seven TFTs plus one capacitor) is used with modification of driving and some switching TFTs. The measurement results on the threshold-voltage ( {V}_{\text{TH}} ) shift and SPICE simulation data on the pixel circuits indicate that the residual image is due to the PI charging effect when a single-gate coplanar poly-Si TFT is used as driving one. It is shown here that adding a bottom electrode to the coplanar poly-Si driving TFT (D-TFT) eliminates the residual image by shielding the poly-Si active layer from the PI charging effect.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3188954