Bipolar resistive switching in Mn-doped BiFeO3 thin films synthesized via sol–gel-assisted spin coating technique

The resistive switching behavior of pure and Mn-doped BiFeO 3 thin films deposited on glass substrates, which exhibits reliable bipolar switching, has been compared in the study presented here. The R on / R off ratio is found to be one order of magnitude higher in Mn-doped BiFeO 3 than in pure BiFeO...

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Published in:Applied physics. A, Materials science & processing Materials science & processing, 2022-09, Vol.128 (9), Article 849
Main Authors: Banda, Rajender Reddy, Halge, Devidas I., Narwade, Vijaykiran N., Bogle, Kashinath A.
Format: Article
Language:English
Subjects:
Applied physics
Characterization and Evaluation of Materials
Condensed Matter Physics
Copper
Doping
Electric potential
Glass substrates
High resistance
Impurities
Low resistance
Machines
Manganese
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Oxygen
Physics
Physics and Astronomy
Processes
Sol-gel processes
Spin coating
Surfaces and Interfaces
Switching
Thin Films
Vacancies
Voltage
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Summary:The resistive switching behavior of pure and Mn-doped BiFeO 3 thin films deposited on glass substrates, which exhibits reliable bipolar switching, has been compared in the study presented here. The R on / R off ratio is found to be one order of magnitude higher in Mn-doped BiFeO 3 than in pure BiFeO 3 , and the RESET voltage is significantly lower. The device's current–voltage curves have been theoretically fitted, and they show filamentary conduction in Cu/Mn:BiFeO 3 /Cu. As opposed to the Cu/BiFeO 3 /Cu device, the atomically doped Mn, on the other hand, controls the migration of oxygen vacancies and was found to dominate RESET voltage in this device as the low resistance state relaxes to the high resistance state at a lower voltage. Our findings imply that the resistive switching mechanism is probably controlled by magnetic impurity doping. Our results imply that magnetic impurity doping regulates the resistive switching mechanism, most likely by affecting the oxygen vacancy migration dynamics.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-022-06003-z