Stochastic Simulation of Development Process in Electron Beam Lithography

We have developed a stochastic simulation of the pattern formation process for positive type resists in electron beam lithography that introduces an improved model of the development process. In the model, the resist dissolved in order from the surface to the substrate, and the dissolution probabili...

Full description

Saved in:
Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 2021, Vol.34(6), pp.661-665
Main Authors: Inoue, Bunta, Koyama, Masanori, Sekiguchi, Atsushi, Shirai, Masamitsu, Hirai, Yoshihiko, Yasuda, Masaaki
Format: Article
Language:English
Subjects:
Development process
Electron beam lithography
Molecular weight
Poly(methyl methacrylate)
Polymethyl methacrylate
Simulation
Solubility rate
Stochastic simulation
Substrates
Time dependence
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have developed a stochastic simulation of the pattern formation process for positive type resists in electron beam lithography that introduces an improved model of the development process. In the model, the resist dissolved in order from the surface to the substrate, and the dissolution probability of the resist molecules depended on the molecular weight. The development characteristics obtained by the simulation was evaluated for Poly(methyl methacrylate) resist. The improved simulation made it possible to reproduce the time-dependent development process of the resist. The dependences of resist molecular weight, development time, and exposure dose on the development obtained by simulation was quantitatively evaluated by comparing with the experimental results.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.34.661