Low temperature coefficient of resistivity in antiperovskite Mn3Ga0.7Sn0.3N compound

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2022-09, Vol.128 (9), Article 851
• Main Authors: Dai, Yongjuan, Wu, Xiangxiang, Guo, Dong, Sun, Zhonghua
• Format: Article
• Language: English
• Subjects: Antiferromagnetism; Applied physics; Characterization and Evaluation of Materials; Coefficients; Condensed Matter Physics; Electrical resistivity; Electronic structure; Ferromagnetism; Low temperature; Machines; Magnetic properties; Magnetic transitions; Manufacturing; Materials science; Nanotechnology; Optical and Electronic Materials; Physics; Physics and Astronomy; Processes; Surfaces and Interfaces; Temperature dependence; Thermodynamic properties; Thin Films
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-022-05995-y

An antiperovskite Mn 3 Ga 0.7 Sn 0.3 N compound was prepared by solid-state reaction. Temperature coefficient of electronic resistivity, magnetic property and thermal property dependent of temperature were characterized. Low temperature coefficient resistivity was first found in antiperovskite Mn 3 GaN class materials. The Mn 3 Ga 0.7 Sn 0.3 N compound showed low temperature coefficient of resistivity and the dρ/dT and TCR value in the measured temperature range 373–400 K is − 2.05 × 10 −10 Ωm/K and − 63 ppm.K −1 , respectively. A weak antiferromagnetic to ferromagnetic transition is corresponding to the abrupt change of resistivity and pronounced decrease of the lattice parameter. Both the magnetic transition and large lattice contraction have a great effect on the electronic structure, which is the key to understand the mechanism of the peculiar low TCR. Although the origin of low TCR needs to be confirmed by further exploration, the current result will be helpful to explore more novel materials of low TCR and clarify physical mechanism behind it.