Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO4 (0001) substrates

GaN layers are grown on 2 inch ScAlMgO4 (0001) nominally on-axis substrates by metalorganic vapor phase epitaxy. The epilayer structural qualities are comparable to those of conventional GaN on sapphire (0001) substrates. The wafer curvature is investigated using X-ray diffraction, and the results s...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2022-09, Vol.61 (9), p.090904
Main Authors: Fukui, Takato, Sakaguchi, Taro, Matsuda, Yoshinobu, Matsukura, Makoto, Kojima, Takahiro, Funato, Mitsuru, Kawakami, Yoichi
Format: Article
Language:English
Subjects:
Bowing
Gallium nitrides
GaN
Heterostructures
Metalorganic chemical vapor deposition
MOVPE
Sapphire
ScAlMgO4
Substrates
Thermal expansion
Vapor phase epitaxy
Vapor phases
Wafer bowing
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Summary:GaN layers are grown on 2 inch ScAlMgO4 (0001) nominally on-axis substrates by metalorganic vapor phase epitaxy. The epilayer structural qualities are comparable to those of conventional GaN on sapphire (0001) substrates. The wafer curvature is investigated using X-ray diffraction, and the results suggest suppressed bowing in the GaN/ScAlMgO4 heterostructures compared with the GaN/sapphire heterostructures. This result is attributed to a smaller mismatch of the thermal expansion coefficients in GaN/ScAlMgO4. The suppressed bowing can be beneficial for device processes.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac89c2