Study of the Effect of Self-Heating in High-Voltage SOI Transistors with a Large Drift Region

The results of studying the contribution of the self-heating mechanism to the CVCs of high-power LDMOS (laterally diffused metal oxide semiconductor) transistors made according to the silicon-on-insulator technology with a long drift region with topological norms of 0.5 microns at high control volta...

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Bibliographic Details
Published in:Russian microelectronics 2022, Vol.51 (5), p.325-333
Main Authors: Rumyantsev, S. V., Novoselov, A. S., Masalsky, N. V.
Format: Article
Language:English
Subjects:
Drift
Electrical Engineering
Engineering
Heating
Metal oxide semiconductors
Norms
Semiconductor devices
Transistors
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Summary:The results of studying the contribution of the self-heating mechanism to the CVCs of high-power LDMOS (laterally diffused metal oxide semiconductor) transistors made according to the silicon-on-insulator technology with a long drift region with topological norms of 0.5 microns at high control voltages are discussed. It is shown that the action of this mechanism significantly changes the CVC of n - and p -type transistors. Differences in the influence of the self-heating mechanism on the characteristics of transistors of the n - and p -type are determined. The results obtained also open up new opportunities for improving the characteristics of microcircuits during their development and methods for further improvement of the LDMOS technology.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739722050080