Radiation-induced defects and hopping transport in two-dimensional MoS2

The novel two-dimensional material- monolayer MoS2, as well as other monolayer transition metal dichalcogenides, were found to possess unique properties, distinguishing them from those of bulk semiconductors and similar to those of other 2D materials such as graphene. The electronic and transport pr...

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Bibliographic Details
Main Authors: Kolesnikov, D. V., Osipov, V. A.
Format: Conference Proceeding
Language:English
Subjects:
Defects
Electron states
Graphene
Molybdenum disulfide
Monolayers
Radiation effects
Transition metal compounds
Transport properties
Two dimensional materials
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Summary:The novel two-dimensional material- monolayer MoS2, as well as other monolayer transition metal dichalcogenides, were found to possess unique properties, distinguishing them from those of bulk semiconductors and similar to those of other 2D materials such as graphene. The electronic and transport properties of MoS2 can be significantly altered by defects that can be introduced by irradiation. We investigate the electronic states in the MoS2 sample with random distribution of nanopores, modelled after the radiation-induced defects in MoS2 monlayer. We find the density of states in the sample and discuss the possible influence of the density to the hopping resistance in the variable-range hopping regime.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0098900