Stages of Defect Formation in a Graphene Coating on a Copper Substrate under Irradiation with Helium and Argon Ions

A graphene coating deposited onto a copper substrate was irradiated with helium and argon ions with an energy of 100 keV. The effect produced by the radiation fluence on the structure of a graphene coating was studied by Raman light scattering. The processes of defect formation in a graphene coating...

Full description

Saved in:
Bibliographic Details
Published in:Moscow University physics bulletin 2022-06, Vol.77 (3), p.498-503
Main Authors: Balakshin, Yu. V., Minnebaev, D. K., Vorobyeva, E. A., Evseev, A. P., Nazarov, A. V., Shemukhin, A. A., Chernysh, B. S.
Format: Article
Language:English
Subjects:
Argon ions
Coating
Copper
Displacement
Fluence
Graphene
Helium
Ion irradiation
Mathematical and Computational Physics
Monte Carlo simulation
Parameters
Physics
Physics and Astronomy
Point defects
Substrates
Theoretical
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A graphene coating deposited onto a copper substrate was irradiated with helium and argon ions with an energy of 100 keV. The effect produced by the radiation fluence on the structure of a graphene coating was studied by Raman light scattering. The processes of defect formation in a graphene coating was modeled at different ion irradiation parameters by the Monte Carlo method in the approximation of binary collisions. It has been shown that the transition to the displacement per atom parameter provides the possibility to compare defect formation processes in a two-dimensional target at different irradiation parameters. It is demonstrated in this study that the accumulation of point defects occurs in a graphene coating under irradiation until the displacement per atom parameter becomes close to , after which the defect domains are joined with further coating structure destruction at a displacement per atom parameter ranged within .
ISSN:0027-1349
1934-8460
DOI:10.3103/S0027134922030067