Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain

Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to...

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Published in:arXiv.org 2022-09
Main Authors: Jun Han Lee, Duong, Nguyen Xuan, Min-Hyoung Jung, Hyun-Jae, Lee, Kim, Ahyoung, Yeo, Youngki, Kim, Junhyung, Kim, Gye-Hyeon, Cho, Byeong-Gwan, Kim, Jaegyu, Furqan Ul Hassan Naqvi, Jong-Seong Bae, Kim, Jeehoon, Ahn, Chang Won, Young-Min, Kim, Tae Kwon Song, Jae-Hyeon Ko, Tae-Yeong Koo, Sohn, Changhee, Park, Kibog, Chan-Ho, Yang, Yang, Sang Mo, Lee, Jun Hee, Hu Young Jeong, Kim, Tae Heon, Oh, Yoon Seok
Format: Article
Language:English
Subjects:
Bias
Coins
Cooperative control
Defects
Dipoles
Ferroelectric materials
Ferroelectricity
First principles
Functional materials
Heterostructures
Hysteresis loops
Oxygen
Perovskites
Polarization
Substrates
Vacancies
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Summary:Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO\(_{3}\), which boosts square-tensile-strain to BaTiO\(_{3}\) and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti\(^{3+}\) ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, we experimentally demonstrate that three electrically controlled polar-ordering states lead to switchable and non-volatile dielectric states for application of non-destructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates.
ISSN:2331-8422
DOI:10.48550/arxiv.2209.05494