Novel Porphyrin‐Containing Polymer Based Memristor for Synaptic Plasticity Simulation

Comprehensive Summary The porphyrin‐based copolymer PZnTPP‐SFX is designed and synthesized by alternating porphyrin and spiro[fluorene‐9,9'‐xanthene] via Suzuki copolymerization. A simple memristor structure of ITO/ZnTPP‐SFX/AlOx/Al was fabricated by spin‐coating process. The conventional synap...

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Bibliographic Details
Published in:Chinese journal of chemistry 2022-10, Vol.40 (20), p.2451-2456
Main Authors: Bian, Linyi, Xie, Meng, Chong, Hao, Zhang, Zhewei, Liu, Guangyi, Han, Qiushuo, Ge, Jiaoyang, Liu, Zheng, Lei, Yang, Zhang, Guangwei, Xie, Linghai
Format: Article
Language:English
Subjects:
Artificial neural networks
Cooperative effects
Copolymerization
Copolymers
Electric potential
Firing rate
Fluorene
Memristor
Memristors
Neural networks
Plasticity
Polymers
Porphyrins
Potentiation
Simulation
Spiro compounds
Synaptic plasticity
Voltage
Xanthene
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Summary:Comprehensive Summary The porphyrin‐based copolymer PZnTPP‐SFX is designed and synthesized by alternating porphyrin and spiro[fluorene‐9,9'‐xanthene] via Suzuki copolymerization. A simple memristor structure of ITO/ZnTPP‐SFX/AlOx/Al was fabricated by spin‐coating process. The conventional synaptic plasticity is emulated using the single memristor including nonlinear transmission characteristics, spike‐timing dependent plasticity and spike‐rate dependent plasticity. New spike‐voltage dependent plasticity is also found in the memristor which can selectively perform potentiation and depression behaviors at a unipolar voltage. Compared with the device performance of uncoordinated metalloporphyrin polymer, it was found that oxygen vacancies diffuse and migrate into PZnTPP‐SFX layer with the assist of coordination metal. This study suggests that porphyrin‐based polymers have great promise for synaptic simulation of artificial neural network. The porphyrin‐based copolymer PZnTPP‐SFX was designed and synthesized by alternating porphyrin and spiro[fluorene‐9,9'‐xanthene] via Suzuki polymerization. Memristor with structure of ITO/PZnTPP‐SFX/Alx/Al was fabricated by spin‐coating process. The conventional synaptic plasticity is emulated using the single memristor including nonlinear transmission characteristics, spike‐timing dependent plasticity and spike‐rate dependent plasticity. New spike‐voltage dependent plasticity is also found in the memristor which can selectively perform potentiation and depression behaviors at a unipolar voltage.
ISSN:1001-604X
1614-7065
DOI:10.1002/cjoc.202200257