Analysis of the optical coupling between GaSb diode lasers and passive waveguides: a step toward monolithic integration on Si platforms

We simulate the optical coupling between 2.3{\bm{\ \mu m}} GaSb-based diode lasers (DLs) epitaxially grown on on-axis silicon (001) and passive waveguides in the butt-coupling geometry. 3D FDTD simulations reveal how the optical coupling is affected by the air gap between the laser cavity and the wa...

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Bibliographic Details
Published in:IEEE photonics journal 2022, Vol.14 (5), p.1-7
Main Authors: Paparella, Michele, Bartolome, Laura Monge, Rodriguez, Jean-Baptiste, Cerutti, Laurent, Grande, Marco, O'Faolain, Liam, Tournie, Eric
Format: Article
Language:English
Subjects:
Air gaps
Couplings
Engineering Sciences
Epitaxial growth
III-V integration on Si
Infrared windows
Optical coupling
Optical waveguides
Optics
Photonic
Photonic integrated circuits
Refractivity
Semiconductor lasers
Silicon
Silicon Photonics
Time-domain analysis
Waveguide lasers
Waveguides
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Summary:We simulate the optical coupling between 2.3{\bm{\ \mu m}} GaSb-based diode lasers (DLs) epitaxially grown on on-axis silicon (001) and passive waveguides in the butt-coupling geometry. 3D FDTD simulations reveal how the optical coupling is affected by the air gap between the laser cavity and the waveguide that arises from the laser etched-facet definition. We also model alternative approaches consisting in filling the gap with higher-refractive index materials transparent in the mid-infrared window. Finally, because of their fabrication flexibility, we propose to implement polymeric waveguides in order to achieve improved coupling performances.
ISSN:1943-0655
1943-0647
DOI:10.1109/JPHOT.2022.3203593