Low-power high-mobility organic single-crystal field-effect transistor

• Published in: Science China materials 2022, Vol.65 (10), p.2779-2785
• Main Authors: Fu, Beibei, Sun, Lingjie, Liu, Lei, Ji, Deyang, Zhang, Xiaotao, Yang, Fangxu, Hu, Wenping
• Format: Article
• Language: English
• Subjects: Chemistry and Materials Science; Chemistry/Food Science; Damage; Dielectrics; Electronic devices; Field effect transistors; Flexible components; Materials Science; Organic crystals; Polymers; Power management; Semiconductor devices; Single crystals
• ISSN: 2095-8226; 2199-4501
• DOI: 10.1007/s40843-022-2035-y

Evolving flexible electronics requires the development of high-mobility and low-power organic field-effect transistors (OFETs) that are crucial for emerging displays, sensors, and label technologies. Among diverse materials, polymer gate dielectrics and two-dimensional (2D) organic crystals have intrinsic flexibility and natural compatibility with each other for OFETs with high performance; however, their combination lacks non-impurity and non-damage construction strategies. In this study, we developed a desirable OFET system using damage-free transfer of 2D organic single crystal, dinaphtho[2,3- b :2′,3′- f ]thieno[3,2- b ]thiophene on a unique polymer dielectric layer, poly(amic acid) (PAA). Benefiting from the unique PAA surface nanostructure and the long-range ordered characteristics of the 2D organic single crystal, the resulting OFETs show remarkable performance with high mobility and low operating voltage of 18.7 cm 2 V −1 s −1 and −3 V, respectively. The result indicates that combining polymer gate dielectric with 2D organic single crystal using a high-quality method can produce flexible electronic devices with high performance.