Grain Size Engineering Using Amorphous-Ge/Si Stack to Enhance Channel Mobility for NAND Flash Memory

We demonstrated that polycrystalline-Si (poly-Si) channel mobility could be significantly enhanced through a combined effect of grain size engineering and Ge diffusion into the poly-Si channel. By crystallizing an amorphous-Ge/Si stack via thermal annealing, grain size enlargement and Ge diffusion o...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-10, Vol.69 (10), p.5940-5943
Main Authors: Lee, Tae In, Kim, Min Ju, Shin, Eui Joong, Lee, Gyusoup, Jeong, Jaejoong, Lee, Yun Hee, Lee, Jung Hoon, Lee, Jaeduk, Cho, Byung Jin
Format: Article
Language:English
Subjects:
Annealing
Ash
Channel mobility
Crystallization
Diffusion
Flash memory (computers)
Germanium
Grain size
memory characteristics
nand flash memory
poly-SiGe
Polysilicon
Programming
Silicon
Size enlargement
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Summary:We demonstrated that polycrystalline-Si (poly-Si) channel mobility could be significantly enhanced through a combined effect of grain size engineering and Ge diffusion into the poly-Si channel. By crystallizing an amorphous-Ge/Si stack via thermal annealing, grain size enlargement and Ge diffusion occur together, resulting in an increase of the channel mobility of up to lpzrptsim100%. The enhanced poly-Si channel mobility improved the program and erase speeds by 55.8% and 30.5%, respectively, with no adverse effect on retention and endurance characteristics.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3201779