Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition

This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high- \kappa /Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of ~0.4 nm was observed in the high-resolution transmissi...

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Bibliographic Details
Published in:IEEE electron device letters 2022-10, Vol.43 (10), p.1605-1608
Main Authors: Lee, Meng-Chien, Zhao, Yi-Yang, Chen, Wei-Lun, Wang, Shin-Yuan, Chen, Yi-Xuan, Luo, Guang-Li, Chien, Chao-Hsin
Format: Article
Language:English
Subjects:
Capacitors
Deposition
Equivalence
Equivalent oxide thickness
Germanium
Hafnium oxide
high-κ direct deposition
Image quality
Logic gates
Metals
Oxidation
Photoelectrons
Si0.8Ge02 MOSCAPs
Silicon
Silicon germanium
Thickness
X ray photoelectron spectroscopy
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Summary:This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high- \kappa /Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of ~0.4 nm was observed in the high-resolution transmission electron microscope (HRTEM) images. The high-quality interface might result from the high- \kappa /Si0.8Ge0.2 interface mainly consisting of the higher Si oxidation states, verified by X-ray photoelectron spectroscopy (XPS). Thus, this study refutes the necessity of IL formation and paves the way for low-EOT Si0.8Ge0.2 devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3203016