A High Voltage Driving Chiplet in Standard 0.18-μm CMOS for Micro-Pixelated LED Displays Integrated With LTPS TFTs

• Published in: IEEE transactions on circuits and systems for video technology 2022-10, Vol.32 (10), p.7204-7211
• Main Authors: Lee, Hsu-Chi, Lu, Yun-Chih, Lin, Yu-Chen, Lai, Wei-Lin, Hsieh, Hsiang-Yuan, Jaw, Boy-Yiing, Chuang, Chin-Tang, Chen, Yung-Chih, Chen, Yi-Jan Emery
• Format: Article
• Language: English
• Subjects: Active matrix organic light emitting diodes; Backplanes; CMOS; Digital to analog converters; display; Displays; driver; Emissions control; Glass substrates; High voltages; Integrated circuits; level shifter; Light emitting diodes; Low temperature; LTPS; Micro-pixelated LED; Organic light emitting diodes; Routing; Semiconductor devices; Silicon films; Thin film transistors; thin-film-transistor; Threshold voltage
• ISSN: 1051-8215; 1558-2205
• DOI: 10.1109/TCSVT.2022.3168051

This paper presents a high-voltage emission driver chiplet for inorganic micro-pixelated light-emitting-diode ( \mu LED) displays in a standard 0.18- \mu \text{m} CMOS technology. Different from the conventional driving scheme of the active-matrix organic light-emitting-diode display, which places the scan drivers and emission drivers at the panel bezels, the CMOS driver chiplets are proposed to sit on the glass substrate among \mu LEDs. The high-voltage swing buffers in the CMOS chiplet are used to drive the low-temperature poly-silicon thin-film transistors on glass backplane to enable the emission control of 300 \mu LEDs. A single CMOS chiplet has 20 output channels, each offering 16M-color depth with 256 grey levels realized by an 8-bit digital-to-analog converter. The maximum channel current is 247 \mu \text{A} and the TFT-gate-driving voltage is 15 V.