P‐5.7: Selective Laser Lift‐off of GaN Micro‐LED from a Sapphire Substrate Using 266‐nm Solid‐state Laser

In this paper, we realize the process of 8*8μm micro‐LED arrays laser lift‐off to remove the sapphire substrate and get integrated GaN epitaxial films by 266nm SPSS solid‐state laser. Several blue light flip‐chip micro‐LED arrays with a resolution of 1280x720 are designed and fabricated based on the...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2022-10, Vol.53 (S1), p.790-792
Main Authors: Yuan, Junchao, Chen, Fuhao
Format: Article
Language:English
Subjects:
Bonding
Bonding strength
Circuits
Epoxy resins
Gallium nitrides
GaN
Laser arrays
Laser beam welding
LLO(Laser Lift-off)
Micro-LED
Optoelectronics
Sapphire
Silicon substrates
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Summary:In this paper, we realize the process of 8*8μm micro‐LED arrays laser lift‐off to remove the sapphire substrate and get integrated GaN epitaxial films by 266nm SPSS solid‐state laser. Several blue light flip‐chip micro‐LED arrays with a resolution of 1280x720 are designed and fabricated based on the known silicon‐substrate‐based drive circuit panel. The LED side is welded to the silicon substrate by metallic bonding process. Epoxy resin structured adhesive is filled between the interface between the silicon carrier and Micro‐LED array to supply a strong mechanical support and an avoidance of de‐bonding.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.16094