High-Pixel-Density 960 × 540 Flip-Chip AlGaInP Red MicroLED Display

This article reports the active matrix (AM) 630-nm red flip-chip [Formula Omitted] micro-light-emitting diode (MicroLED) displays with high pixels per inch (PPI) of 1600. A novel p-side-up AlGaInP thin-film structure by a wafer-transfer technique onto the sapphire substrate is proposed to fabricate...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-11, Vol.69 (11), p.6206-6211
Main Authors: Wu, Meng-Chyi, Hsu, Zi-Liang, Wu, Cheng-Yeu
Format: Article
Language:English
Subjects:
Aluminum gallium indium phosphides
Arrays
Bonding
Image resolution
Integrated circuits
Leakage current
Light emitting diodes
Pixels
Quantum efficiency
Sapphire
Substrates
Thin films
Virtual reality
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Summary:This article reports the active matrix (AM) 630-nm red flip-chip [Formula Omitted] micro-light-emitting diode (MicroLED) displays with high pixels per inch (PPI) of 1600. A novel p-side-up AlGaInP thin-film structure by a wafer-transfer technique onto the sapphire substrate is proposed to fabricate the [Formula Omitted] MicroLED array. In addition, the single pixel with a diameter of [Formula Omitted] on the MicroLED array exhibits excellent characteristics, including a forward voltage of 1.96 V at [Formula Omitted], an extremely low leakage current of 90 fA at −10 V, and a high light output power of [Formula Omitted] at 1 mA. The highest external quantum efficiency (EQE) is 5.3% at 330 A/cm2 for the single pixel of MicroLED. The operability and lightening pixels of flip-chip bonding to AM driver IC analyzed by software image J are 80.21% and 415 808, respectively. Through flip-chip bonding technology, the [Formula Omitted] MicroLED display can demonstrate the high-resolution graphic and video images. It is a prospective technology for the application of augmented and virtual realities (AR and VR) and optogenetic neural stimulation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3209134