Advances in dielectric performance of atomically engineered Sr1.8Bi0.2Nb3O10 perovskite nanosheet thin films

The search for new high-performance dielectric materials has attracted considerable research interest. Several mechanisms to achieve high permittivity have been proposed, such as BaTiO3-based perovskites or CaCu3Ti4O12. However, developing high-performance thin films remains a challenge. Here, we pr...

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Bibliographic Details
Published in:Journal of alloys and compounds 2022-12, Vol.925, p.166606, Article 166606
Main Authors: Yim, Haena, Yoo, So Yeon, Choi, Haneul, Chang, Hye Jung, Hwang, Seong-Ju, Nahm, Sahn, Osada, Minoru, Choi, Ji-Won
Format: Article
Language:English
Subjects:
Atomic modification
Barium titanates
Cation exchanging
Chemical exfoliation
Dielectric
Dielectric loss
Dielectrics
Nanosheet
Nanosheets
Permittivity
Perovskite
Perovskites
Thin films
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Summary:The search for new high-performance dielectric materials has attracted considerable research interest. Several mechanisms to achieve high permittivity have been proposed, such as BaTiO3-based perovskites or CaCu3Ti4O12. However, developing high-performance thin films remains a challenge. Here, we propose a new material design route to achieve high permittivity behavior in atomically thin films. We present a concrete example of Dion–Jacobson-type KSr2-xBixNb3O10 and its cation-exchanged form HSr2-xBixNb3O10, which exhibits a stable colossal permittivity and low dielectric loss. In addition, Sr2(1−x)Bi2xNb3O10-δ nanosheets were obtained by chemical exfoliation, with a high dielectric permittivity of over 500—the highest among all known dielectrics in ultrathin films (
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2022.166606