Advances in dielectric performance of atomically engineered Sr1.8Bi0.2Nb3O10 perovskite nanosheet thin films

The search for new high-performance dielectric materials has attracted considerable research interest. Several mechanisms to achieve high permittivity have been proposed, such as BaTiO3-based perovskites or CaCu3Ti4O12. However, developing high-performance thin films remains a challenge. Here, we pr...

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Published in:Journal of alloys and compounds 2022-12, Vol.925, p.166606, Article 166606
Main Authors: Yim, Haena, Yoo, So Yeon, Choi, Haneul, Chang, Hye Jung, Hwang, Seong-Ju, Nahm, Sahn, Osada, Minoru, Choi, Ji-Won
Format: Article
Language:English
Subjects:
Atomic modification
Barium titanates
Cation exchanging
Chemical exfoliation
Dielectric
Dielectric loss
Dielectrics
Nanosheet
Nanosheets
Permittivity
Perovskite
Perovskites
Thin films
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cited_by cdi_FETCH-LOGICAL-c450t-3b1d38b4f471a3bb2cd21bb76b84cfdfffaae1edae62f58bd1a56db3fe12bfea3
cites cdi_FETCH-LOGICAL-c450t-3b1d38b4f471a3bb2cd21bb76b84cfdfffaae1edae62f58bd1a56db3fe12bfea3
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container_start_page 166606
container_title Journal of alloys and compounds
container_volume 925
creator Yim, Haena
Yoo, So Yeon
Choi, Haneul
Chang, Hye Jung
Hwang, Seong-Ju
Nahm, Sahn
Osada, Minoru
Choi, Ji-Won
description The search for new high-performance dielectric materials has attracted considerable research interest. Several mechanisms to achieve high permittivity have been proposed, such as BaTiO3-based perovskites or CaCu3Ti4O12. However, developing high-performance thin films remains a challenge. Here, we propose a new material design route to achieve high permittivity behavior in atomically thin films. We present a concrete example of Dion–Jacobson-type KSr2-xBixNb3O10 and its cation-exchanged form HSr2-xBixNb3O10, which exhibits a stable colossal permittivity and low dielectric loss. In addition, Sr2(1−x)Bi2xNb3O10-δ nanosheets were obtained by chemical exfoliation, with a high dielectric permittivity of over 500—the highest among all known dielectrics in ultrathin films (
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2728517427</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0925838822029978</els_id><sourcerecordid>2728517427</sourcerecordid><originalsourceid>FETCH-LOGICAL-c450t-3b1d38b4f471a3bb2cd21bb76b84cfdfffaae1edae62f58bd1a56db3fe12bfea3</originalsourceid><addsrcrecordid>eNqFkEtL5TAUx4MoeH18BCHgujUnadPclag444CMi9F1yONEU9vmmtQLfnt7ue5ndRb_F-dHyAWwGhjIq77uzTC4NNaccV6DlJLJA7IC1YmqkXJ9SFZszdtKCaWOyUkpPWMM1gJWZLjxWzM5LDRO1Ecc0M05OrrBHFIedxJNgZo5jdEtK18Up9c4IWb09F-GWt1GVvO_VjwB26XStrzHGelkplTeEGc6vy3VIQ5jOSNHwQwFz3_uKXn5df9891A9Pv3-c3fzWLmmZXMlLHihbBOaDoywljvPwdpOWtW44EMIxiCgNyh5aJX1YFrprQgI3AY04pRc7ns3OX18Ypl1nz7ztExq3nHVQtfwbnG1e5fLqZSMQW9yHE3-0sD0Dqzu9Q9YvQOr92CX3PU-h8sL24hZFxdxAeVjXuhpn-J_Gr4BYaSGRw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2728517427</pqid></control><display><type>article</type><title>Advances in dielectric performance of atomically engineered Sr1.8Bi0.2Nb3O10 perovskite nanosheet thin films</title><source>Elsevier</source><creator>Yim, Haena ; Yoo, So Yeon ; Choi, Haneul ; Chang, Hye Jung ; Hwang, Seong-Ju ; Nahm, Sahn ; Osada, Minoru ; Choi, Ji-Won</creator><creatorcontrib>Yim, Haena ; Yoo, So Yeon ; Choi, Haneul ; Chang, Hye Jung ; Hwang, Seong-Ju ; Nahm, Sahn ; Osada, Minoru ; Choi, Ji-Won</creatorcontrib><description>The search for new high-performance dielectric materials has attracted considerable research interest. Several mechanisms to achieve high permittivity have been proposed, such as BaTiO3-based perovskites or CaCu3Ti4O12. However, developing high-performance thin films remains a challenge. Here, we propose a new material design route to achieve high permittivity behavior in atomically thin films. We present a concrete example of Dion–Jacobson-type KSr2-xBixNb3O10 and its cation-exchanged form HSr2-xBixNb3O10, which exhibits a stable colossal permittivity and low dielectric loss. In addition, Sr2(1−x)Bi2xNb3O10-δ nanosheets were obtained by chemical exfoliation, with a high dielectric permittivity of over 500—the highest among all known dielectrics in ultrathin films (&lt;20 nm). The Bi substitution of Sr2Nb3O10 led to a two-fold increase in the dielectric permittivity owing to the higher polarizability of Bi ions. Our proposed method provides a strategy for obtaining new high-k nanoscale dielectrics for use in nanoscaled electronics. [Display omitted] •A novel perovskite structure Bi-substituted Sr2Nb3O10 2D nanosheets are successfully synthesized.•2D nanosheets are deposited to thin film by Langmuir-Blodgett method.•Polarizable Bi3+ ions induced higher electronic polarizability in perovskites.•The enhanced NbO6 distortion due to Bi3+ substitution also effected dielectric permittivity.•The nanosheet thin films show dielectric permittivity of 540 with&lt; 5 % loss.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2022.166606</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Atomic modification ; Barium titanates ; Cation exchanging ; Chemical exfoliation ; Dielectric ; Dielectric loss ; Dielectrics ; Nanosheet ; Nanosheets ; Permittivity ; Perovskite ; Perovskites ; Thin films</subject><ispartof>Journal of alloys and compounds, 2022-12, Vol.925, p.166606, Article 166606</ispartof><rights>2022</rights><rights>Copyright Elsevier BV Dec 5, 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c450t-3b1d38b4f471a3bb2cd21bb76b84cfdfffaae1edae62f58bd1a56db3fe12bfea3</citedby><cites>FETCH-LOGICAL-c450t-3b1d38b4f471a3bb2cd21bb76b84cfdfffaae1edae62f58bd1a56db3fe12bfea3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Yim, Haena</creatorcontrib><creatorcontrib>Yoo, So Yeon</creatorcontrib><creatorcontrib>Choi, Haneul</creatorcontrib><creatorcontrib>Chang, Hye Jung</creatorcontrib><creatorcontrib>Hwang, Seong-Ju</creatorcontrib><creatorcontrib>Nahm, Sahn</creatorcontrib><creatorcontrib>Osada, Minoru</creatorcontrib><creatorcontrib>Choi, Ji-Won</creatorcontrib><title>Advances in dielectric performance of atomically engineered Sr1.8Bi0.2Nb3O10 perovskite nanosheet thin films</title><title>Journal of alloys and compounds</title><description>The search for new high-performance dielectric materials has attracted considerable research interest. Several mechanisms to achieve high permittivity have been proposed, such as BaTiO3-based perovskites or CaCu3Ti4O12. However, developing high-performance thin films remains a challenge. Here, we propose a new material design route to achieve high permittivity behavior in atomically thin films. We present a concrete example of Dion–Jacobson-type KSr2-xBixNb3O10 and its cation-exchanged form HSr2-xBixNb3O10, which exhibits a stable colossal permittivity and low dielectric loss. In addition, Sr2(1−x)Bi2xNb3O10-δ nanosheets were obtained by chemical exfoliation, with a high dielectric permittivity of over 500—the highest among all known dielectrics in ultrathin films (&lt;20 nm). The Bi substitution of Sr2Nb3O10 led to a two-fold increase in the dielectric permittivity owing to the higher polarizability of Bi ions. Our proposed method provides a strategy for obtaining new high-k nanoscale dielectrics for use in nanoscaled electronics. [Display omitted] •A novel perovskite structure Bi-substituted Sr2Nb3O10 2D nanosheets are successfully synthesized.•2D nanosheets are deposited to thin film by Langmuir-Blodgett method.•Polarizable Bi3+ ions induced higher electronic polarizability in perovskites.•The enhanced NbO6 distortion due to Bi3+ substitution also effected dielectric permittivity.•The nanosheet thin films show dielectric permittivity of 540 with&lt; 5 % loss.</description><subject>Atomic modification</subject><subject>Barium titanates</subject><subject>Cation exchanging</subject><subject>Chemical exfoliation</subject><subject>Dielectric</subject><subject>Dielectric loss</subject><subject>Dielectrics</subject><subject>Nanosheet</subject><subject>Nanosheets</subject><subject>Permittivity</subject><subject>Perovskite</subject><subject>Perovskites</subject><subject>Thin films</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNqFkEtL5TAUx4MoeH18BCHgujUnadPclag444CMi9F1yONEU9vmmtQLfnt7ue5ndRb_F-dHyAWwGhjIq77uzTC4NNaccV6DlJLJA7IC1YmqkXJ9SFZszdtKCaWOyUkpPWMM1gJWZLjxWzM5LDRO1Ecc0M05OrrBHFIedxJNgZo5jdEtK18Up9c4IWb09F-GWt1GVvO_VjwB26XStrzHGelkplTeEGc6vy3VIQ5jOSNHwQwFz3_uKXn5df9891A9Pv3-c3fzWLmmZXMlLHihbBOaDoywljvPwdpOWtW44EMIxiCgNyh5aJX1YFrprQgI3AY04pRc7ns3OX18Ypl1nz7ztExq3nHVQtfwbnG1e5fLqZSMQW9yHE3-0sD0Dqzu9Q9YvQOr92CX3PU-h8sL24hZFxdxAeVjXuhpn-J_Gr4BYaSGRw</recordid><startdate>20221205</startdate><enddate>20221205</enddate><creator>Yim, Haena</creator><creator>Yoo, So Yeon</creator><creator>Choi, Haneul</creator><creator>Chang, Hye Jung</creator><creator>Hwang, Seong-Ju</creator><creator>Nahm, Sahn</creator><creator>Osada, Minoru</creator><creator>Choi, Ji-Won</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20221205</creationdate><title>Advances in dielectric performance of atomically engineered Sr1.8Bi0.2Nb3O10 perovskite nanosheet thin films</title><author>Yim, Haena ; Yoo, So Yeon ; Choi, Haneul ; Chang, Hye Jung ; Hwang, Seong-Ju ; Nahm, Sahn ; Osada, Minoru ; Choi, Ji-Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c450t-3b1d38b4f471a3bb2cd21bb76b84cfdfffaae1edae62f58bd1a56db3fe12bfea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Atomic modification</topic><topic>Barium titanates</topic><topic>Cation exchanging</topic><topic>Chemical exfoliation</topic><topic>Dielectric</topic><topic>Dielectric loss</topic><topic>Dielectrics</topic><topic>Nanosheet</topic><topic>Nanosheets</topic><topic>Permittivity</topic><topic>Perovskite</topic><topic>Perovskites</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yim, Haena</creatorcontrib><creatorcontrib>Yoo, So Yeon</creatorcontrib><creatorcontrib>Choi, Haneul</creatorcontrib><creatorcontrib>Chang, Hye Jung</creatorcontrib><creatorcontrib>Hwang, Seong-Ju</creatorcontrib><creatorcontrib>Nahm, Sahn</creatorcontrib><creatorcontrib>Osada, Minoru</creatorcontrib><creatorcontrib>Choi, Ji-Won</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yim, Haena</au><au>Yoo, So Yeon</au><au>Choi, Haneul</au><au>Chang, Hye Jung</au><au>Hwang, Seong-Ju</au><au>Nahm, Sahn</au><au>Osada, Minoru</au><au>Choi, Ji-Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Advances in dielectric performance of atomically engineered Sr1.8Bi0.2Nb3O10 perovskite nanosheet thin films</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2022-12-05</date><risdate>2022</risdate><volume>925</volume><spage>166606</spage><pages>166606-</pages><artnum>166606</artnum><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>The search for new high-performance dielectric materials has attracted considerable research interest. Several mechanisms to achieve high permittivity have been proposed, such as BaTiO3-based perovskites or CaCu3Ti4O12. However, developing high-performance thin films remains a challenge. Here, we propose a new material design route to achieve high permittivity behavior in atomically thin films. We present a concrete example of Dion–Jacobson-type KSr2-xBixNb3O10 and its cation-exchanged form HSr2-xBixNb3O10, which exhibits a stable colossal permittivity and low dielectric loss. In addition, Sr2(1−x)Bi2xNb3O10-δ nanosheets were obtained by chemical exfoliation, with a high dielectric permittivity of over 500—the highest among all known dielectrics in ultrathin films (&lt;20 nm). The Bi substitution of Sr2Nb3O10 led to a two-fold increase in the dielectric permittivity owing to the higher polarizability of Bi ions. Our proposed method provides a strategy for obtaining new high-k nanoscale dielectrics for use in nanoscaled electronics. [Display omitted] •A novel perovskite structure Bi-substituted Sr2Nb3O10 2D nanosheets are successfully synthesized.•2D nanosheets are deposited to thin film by Langmuir-Blodgett method.•Polarizable Bi3+ ions induced higher electronic polarizability in perovskites.•The enhanced NbO6 distortion due to Bi3+ substitution also effected dielectric permittivity.•The nanosheet thin films show dielectric permittivity of 540 with&lt; 5 % loss.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2022.166606</doi><oa>free_for_read</oa></addata></record>
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subjects Atomic modification
Barium titanates
Cation exchanging
Chemical exfoliation
Dielectric
Dielectric loss
Dielectrics
Nanosheet
Nanosheets
Permittivity
Perovskite
Perovskites
Thin films
title Advances in dielectric performance of atomically engineered Sr1.8Bi0.2Nb3O10 perovskite nanosheet thin films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T03%3A02%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Advances%20in%20dielectric%20performance%20of%20atomically%20engineered%20Sr1.8Bi0.2Nb3O10%20perovskite%20nanosheet%20thin%20films&rft.jtitle=Journal%20of%20alloys%20and%20compounds&rft.au=Yim,%20Haena&rft.date=2022-12-05&rft.volume=925&rft.spage=166606&rft.pages=166606-&rft.artnum=166606&rft.issn=0925-8388&rft.eissn=1873-4669&rft_id=info:doi/10.1016/j.jallcom.2022.166606&rft_dat=%3Cproquest_cross%3E2728517427%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c450t-3b1d38b4f471a3bb2cd21bb76b84cfdfffaae1edae62f58bd1a56db3fe12bfea3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2728517427&rft_id=info:pmid/&rfr_iscdi=true