Synthesis and polymorphism of a new phase 1D chalcogenide M2N3X8 structure based on the periodic table: Ta2Ni3S8 with a tetragonal structure

• Published in: Journal of alloys and compounds 2022-12, Vol.926, p.166752, Article 166752
• Main Authors: Jeon, Jiho, Woo, Chaeheon, Choi, Kyung Hwan, Jeong, Byung Joo, Kang, Jinsu, Zhang, Xiaojie, Dong, Xue, Kim, Tae Yeong, Ahn, Jungyoon, Oh, Hyung-Suk, Yu, Hak Ki, Choi, Jae-Young
• Format: Article
• Language: English
• Subjects: 1D chalcogenide M2N3X8; Chalcogenides; Electronic devices; Lattice design; Lattice matching; Lattice parameters; Low-dimensional materials; Material properties; Orthorhombic phase; Periodic table; Polymorphism; Structural analysis; Ta2Ni3S8
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2022.166752

For the first time, a new structure of Ta2Ni3S8, one of the family systems of M2N3X8, a recently studied one-dimensional chalcogenide material, was synthesized. Unlike Ta2Ni3S8 in the orthorhombic phase, which is known to have semiconductor properties, Ta2Ni3S8 in the tetragonal phase displayed metallic material properties. Structural analysis through X-ray diffraction confirmed that the tetragonal Ta2Ni3S8 (T-Ta2Ni3S8) had the same structure as the tetragonal Ta2Ni3Se8 (T-Ta2Ni3Se8), a material with an S- and Se- substitution; the only difference was the lattice constant. Additionally, different elemental analyses were used to confirm that the ratio of Ta:Ni:S elements was 2:3:8. This study is significant as basic research that can be applied to various electronic devices by applying bandgap tuning and lattice-matched electrode design based on M2N3X8 family material. •New tetragonal Ta2Ni3S8, a vdW one-dimensional material, was synthesized.•T-Ta2Ni3S8 was proven to have the same crystal structure as T-Ta2Ni3Se8, the family material.•T-Ta2Ni3S8 has metallic behavior in electrical properties, though having a different chalcogenide element than T-Ta2Ni3Se8.