Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications

In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-Ga 2 O 3 substrate is proposed using a field-plate mechanism and compared with a recessed gate structure (recessed depth of 25 nm, 30 nm, and 35 nm) without field-plate. The device is optimized and analysed to...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2022-11, Vol.81 (9), p.876-884
Main Authors: Rao, G. Purnachandra, Lenka, Trupti Ranjan, Singh, Rajan, Nguyen, Hieu Pham Trung
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Figure of merit
Gallium nitrides
Gallium oxides
High electron mobility transistors
Leakage current
Mathematical and Computational Physics
Nanoelectronics
Original Paper - Condensed Matter
Particle and Nuclear Physics
Physics
Physics and Astronomy
Semiconductor devices
Substrates
Theoretical
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Summary:In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-Ga 2 O 3 substrate is proposed using a field-plate mechanism and compared with a recessed gate structure (recessed depth of 25 nm, 30 nm, and 35 nm) without field-plate. The device is optimized and analysed to obtain diminished leakage current (10 −16 A/mm), R ON (1.27 Ω -mm), PFOM (power figure of merit) (4373 MW/cm 3 ), breakdown voltage (108 V), and excellent DC characteristics using Atlas TCAD. It is observed that the obtained results are better than those reported in recent studies. These R ON and PFOM demonstrate that the suggested device structure on the preferred β-Ga 2 O 3 substrate is an excellent contender for future high-power nanoelectronics applications.
ISSN:0374-4884
1976-8524
DOI:10.1007/s40042-022-00603-x