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Potential Effect on the Properties of Cu3BiS3 Thin Film Co-electrodeposited in Aqueous Solution Enriched Using DFT Calculation
In order to optimize the potential ( U ) to allow the synthesis of Cu 3 BiS 3 (CBS) thin films by co-electrodeposition, the synthesized samples on fluorine-doped tin oxide (FTO) were sulfurized and then analyzed by many techniques. For U = −0.95 V, x-ray diffraction (XRD) shows the major presence o...
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Published in: | Journal of electronic materials 2022-12, Vol.51 (12), p.7223-7233 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In order to optimize the potential (
U
) to allow the synthesis of Cu
3
BiS
3
(CBS) thin films by co-electrodeposition, the synthesized samples on fluorine-doped tin oxide (FTO) were sulfurized and then analyzed by many techniques. For
U
= −0.95 V, x-ray diffraction (XRD) shows the major presence of Cu
3
BiS
3
characteristic peaks at 31.27°, 28.99°, and 34.81° as well as the main peak at 280 cm
−1
in their Raman spectra. However, the potential decrease to
U
= −1.05 V introduced a broadening of the main peaks on the two XRD and Raman spectra. With regard to the morphology, scanning electron microscopy (SEM) mapping analysis shows a well-defined grain shape for
U
= −0.95 V, which varies with the variation in
U
. In addition, the UV–visible spectrum indicates that the optical band gap decreases from 1.44 eV to 1.33 eV when the potential
U
varies from −1.050 V to −0.950 V. The CBS semiconductor nature was also highlighted by the theoretical DFT calculations in the generalized gradient approximation with modified Becke–Johnson (GGA + mbJ) condition. This theoretical enrichment confirms that the CBS optical band gap is about 1.42–1.52 eV, which is comparable to that of the experimental study. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-022-09964-2 |