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The effect of acceptor dopant on the memory effect of BaTiO3 ceramics

In the present study, BaTi(1-x)MxO3 (x = 0.005, 0.01, 0.015; M is Mn, Fe, and Co) ceramics were prepared by the conventional solid-state reaction method. Four distinct and independently addressed memory states were experimentally obtained based on the double hysteresis loop, which was achieved by ac...

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Published in:Journal of alloys and compounds 2022-12, Vol.928, p.167182, Article 167182
Main Authors: Liu, Wenfeng, Jin, Yihang, Zhao, Yi, Kong, Fanyi, Gao, Jinghan, Zhang, Lei, Li, Shengtao
Format: Article
Language:English
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Summary:In the present study, BaTi(1-x)MxO3 (x = 0.005, 0.01, 0.015; M is Mn, Fe, and Co) ceramics were prepared by the conventional solid-state reaction method. Four distinct and independently addressed memory states were experimentally obtained based on the double hysteresis loop, which was achieved by acceptor doping in BaTiO3 ceramics. Moreover, this study indicated that for acceptor-doped BaTiO3 ceramics, larger electronegativity and smaller ionic radius of acceptor ions benefitted the more significant memory effect and better fatigue resistance. All these results could provide a promising solution for multi-state memory applications. •Acquired four independently addressed memory states from the double hysteresis loop in the acceptor-doped BaTiO3 ceramics.•Doping acceptor dopants with large electronegativity and small ionic radius could induce a more remarkable memory effect.•Enhanced fatigue resistance of the memory effect was achieved, which made the present ceramics promising for applications.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2022.167182