Molecular dynamics study of the growth of ZnOx films

Crystalline zinc oxide thin films are important due to a combination of optical transparency, electrical conductivity, and piezoelectric and pyroelectric properties. These functional properties are improved with increasing perfection of the crystalline structure. In this paper, classical molecular d...

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Published in:Journal of applied physics 2022-11, Vol.132 (18)
Main Authors: Hantova, Kamila, Houska, Jiri
Format: Article
Language:English
Subjects:
Applied physics
Dynamic structural analysis
Electrical resistivity
Kinetic energy
Molecular dynamics
Molecular structure
Optical properties
Parameter identification
Piezoelectricity
Process parameters
Thin films
Zinc oxide
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Houska, Jiri
description Crystalline zinc oxide thin films are important due to a combination of optical transparency, electrical conductivity, and piezoelectric and pyroelectric properties. These functional properties are improved with increasing perfection of the crystalline structure. In this paper, classical molecular dynamics with a reactive force field was used to simulate the atom-by-atom growth of ZnOx films on a crystalline template. Contrary to previous modeling studies, the effect of a wide range of process parameters (elemental ratio x, kinetic energy of arriving atoms, and fraction of fast atoms in the particle flux) on the film crystallinity was investigated. All the parameters were found to have a significant impact. Counterintuitively, the highest crystal quality was obtained for slightly overstoichiometric films with x > 1. The results provide a quantitative insight into the role of individual deposition parameters, and the identification of their optimum values facilitates a further improvement of the film properties.
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fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_2734403553</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2734403553</sourcerecordid><originalsourceid>FETCH-LOGICAL-p183t-cb0295f1e92a86d1cb3a0c4a3fb837c6dd89245fd83ae1ece28a2cc1d2834fed3</originalsourceid><addsrcrecordid>eNp9kE9LwzAchoMoOKcHv0HBm9D5S9K0yVGGTmGyi168hCx_XEfX1CRV--3t2MCbp5cXHp4XXoSuMcwwlPSOzWBMzsoTNMHARV4xBqdoAkBwzkUlztFFjFsAjDkVE1S8-MbqvlEhM0OrdrWOWUy9GTLvsrSx2Ufw32mzb-_t6idzdbOLl-jMqSbaq2NO0dvjw-v8KV-uFs_z-2XejfKU6zUQwRy2giheGqzXVIEuFHVrTitdGsMFKZgznCqLrbaEK6I1NoTTwllDp-jm4O2C_-xtTHLr-9COk5JUtCiAMkZH6vZARV0nlWrfyi7UOxUGiUHuX5FMHl_5D_7y4Q-UnXH0FxBqYls</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2734403553</pqid></control><display><type>article</type><title>Molecular dynamics study of the growth of ZnOx films</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Hantova, Kamila ; Houska, Jiri</creator><creatorcontrib>Hantova, Kamila ; Houska, Jiri</creatorcontrib><description>Crystalline zinc oxide thin films are important due to a combination of optical transparency, electrical conductivity, and piezoelectric and pyroelectric properties. These functional properties are improved with increasing perfection of the crystalline structure. In this paper, classical molecular dynamics with a reactive force field was used to simulate the atom-by-atom growth of ZnOx films on a crystalline template. Contrary to previous modeling studies, the effect of a wide range of process parameters (elemental ratio x, kinetic energy of arriving atoms, and fraction of fast atoms in the particle flux) on the film crystallinity was investigated. All the parameters were found to have a significant impact. Counterintuitively, the highest crystal quality was obtained for slightly overstoichiometric films with x &gt; 1. The results provide a quantitative insight into the role of individual deposition parameters, and the identification of their optimum values facilitates a further improvement of the film properties.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0106856</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Dynamic structural analysis ; Electrical resistivity ; Kinetic energy ; Molecular dynamics ; Molecular structure ; Optical properties ; Parameter identification ; Piezoelectricity ; Process parameters ; Thin films ; Zinc oxide</subject><ispartof>Journal of applied physics, 2022-11, Vol.132 (18)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-4809-4128 ; 0000-0001-5323-9435</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Hantova, Kamila</creatorcontrib><creatorcontrib>Houska, Jiri</creatorcontrib><title>Molecular dynamics study of the growth of ZnOx films</title><title>Journal of applied physics</title><description>Crystalline zinc oxide thin films are important due to a combination of optical transparency, electrical conductivity, and piezoelectric and pyroelectric properties. These functional properties are improved with increasing perfection of the crystalline structure. In this paper, classical molecular dynamics with a reactive force field was used to simulate the atom-by-atom growth of ZnOx films on a crystalline template. Contrary to previous modeling studies, the effect of a wide range of process parameters (elemental ratio x, kinetic energy of arriving atoms, and fraction of fast atoms in the particle flux) on the film crystallinity was investigated. All the parameters were found to have a significant impact. Counterintuitively, the highest crystal quality was obtained for slightly overstoichiometric films with x &gt; 1. The results provide a quantitative insight into the role of individual deposition parameters, and the identification of their optimum values facilitates a further improvement of the film properties.</description><subject>Applied physics</subject><subject>Dynamic structural analysis</subject><subject>Electrical resistivity</subject><subject>Kinetic energy</subject><subject>Molecular dynamics</subject><subject>Molecular structure</subject><subject>Optical properties</subject><subject>Parameter identification</subject><subject>Piezoelectricity</subject><subject>Process parameters</subject><subject>Thin films</subject><subject>Zinc oxide</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LwzAchoMoOKcHv0HBm9D5S9K0yVGGTmGyi168hCx_XEfX1CRV--3t2MCbp5cXHp4XXoSuMcwwlPSOzWBMzsoTNMHARV4xBqdoAkBwzkUlztFFjFsAjDkVE1S8-MbqvlEhM0OrdrWOWUy9GTLvsrSx2Ufw32mzb-_t6idzdbOLl-jMqSbaq2NO0dvjw-v8KV-uFs_z-2XejfKU6zUQwRy2giheGqzXVIEuFHVrTitdGsMFKZgznCqLrbaEK6I1NoTTwllDp-jm4O2C_-xtTHLr-9COk5JUtCiAMkZH6vZARV0nlWrfyi7UOxUGiUHuX5FMHl_5D_7y4Q-UnXH0FxBqYls</recordid><startdate>20221114</startdate><enddate>20221114</enddate><creator>Hantova, Kamila</creator><creator>Houska, Jiri</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4809-4128</orcidid><orcidid>https://orcid.org/0000-0001-5323-9435</orcidid></search><sort><creationdate>20221114</creationdate><title>Molecular dynamics study of the growth of ZnOx films</title><author>Hantova, Kamila ; Houska, Jiri</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p183t-cb0295f1e92a86d1cb3a0c4a3fb837c6dd89245fd83ae1ece28a2cc1d2834fed3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Dynamic structural analysis</topic><topic>Electrical resistivity</topic><topic>Kinetic energy</topic><topic>Molecular dynamics</topic><topic>Molecular structure</topic><topic>Optical properties</topic><topic>Parameter identification</topic><topic>Piezoelectricity</topic><topic>Process parameters</topic><topic>Thin films</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hantova, Kamila</creatorcontrib><creatorcontrib>Houska, Jiri</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hantova, Kamila</au><au>Houska, Jiri</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Molecular dynamics study of the growth of ZnOx films</atitle><jtitle>Journal of applied physics</jtitle><date>2022-11-14</date><risdate>2022</risdate><volume>132</volume><issue>18</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Crystalline zinc oxide thin films are important due to a combination of optical transparency, electrical conductivity, and piezoelectric and pyroelectric properties. These functional properties are improved with increasing perfection of the crystalline structure. In this paper, classical molecular dynamics with a reactive force field was used to simulate the atom-by-atom growth of ZnOx films on a crystalline template. Contrary to previous modeling studies, the effect of a wide range of process parameters (elemental ratio x, kinetic energy of arriving atoms, and fraction of fast atoms in the particle flux) on the film crystallinity was investigated. All the parameters were found to have a significant impact. Counterintuitively, the highest crystal quality was obtained for slightly overstoichiometric films with x &gt; 1. The results provide a quantitative insight into the role of individual deposition parameters, and the identification of their optimum values facilitates a further improvement of the film properties.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0106856</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-4809-4128</orcidid><orcidid>https://orcid.org/0000-0001-5323-9435</orcidid></addata></record>
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subjects Applied physics
Dynamic structural analysis
Electrical resistivity
Kinetic energy
Molecular dynamics
Molecular structure
Optical properties
Parameter identification
Piezoelectricity
Process parameters
Thin films
Zinc oxide
title Molecular dynamics study of the growth of ZnOx films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T17%3A53%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Molecular%20dynamics%20study%20of%20the%20growth%20of%20ZnOx%20films&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Hantova,%20Kamila&rft.date=2022-11-14&rft.volume=132&rft.issue=18&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/5.0106856&rft_dat=%3Cproquest_scita%3E2734403553%3C/proquest_scita%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p183t-cb0295f1e92a86d1cb3a0c4a3fb837c6dd89245fd83ae1ece28a2cc1d2834fed3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2734403553&rft_id=info:pmid/&rfr_iscdi=true