20.2 GHz‐µm fT–LG in InAlN/GaN‐on‐Si High Electron Mobility Transistors

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2022-11, Vol.219 (21), p.n/a
• Main Authors: Charan, Vanjari Sai, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.
• Format: Article
• Language: English
• Subjects: delay; Delay time analysis; effective electron velocity; f T; Gallium nitrides; GaN; High electron mobility transistors; InAlN; Semiconductor devices; Transconductance
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.202100858

Herein, InAlN/GaN‐on‐Si high‐electron‐mobility transistors (HEMTs) with an fT–LG product of 20.2 GHz–μm are demonstrated. The device with a gate length of 200 nm and a source–drain spacing of 900 nm exhibits a peak transconductance of 543 mS mm−1, an ION/IOFF ratio of ≈107, a maximum on‐current of 2.4 A mm−1, and an on‐resistance of 1.07 Ω mm. Small‐signal characteristics show a unity current gain cutoff frequency of 101 GHz. Delay time analysis is performed to evaluate various delay components and their contribution to the small‐signal performance of the device. An effective electron velocity of 1.56 × 107 cm s−1 is estimated in these devices, which minimizes the intrinsic delay of the transistor. The factors limiting the fT–LG product in deeply scaled devices are discussed using the delay analysis. An fT–LG product of 20.2 GHz–μm and an effective electron velocity of 1.56 × 107 cm s−1 are demonstrated in InAlN/GaN‐on‐Si high‐electron‐mobility transistors. Delay time analysis is performed to study various delay components limiting the fT and the fT–LG product in deeply scaled devices.