A Hydrogen Sensor Based on Pd/InP Structures

Тhe development of a photoelectrical hydrogen sensor without sensor element heating is presented. For the sensitive element of the hydrogen sensor the Pd/n-InP (Schottkie diode) and Pd/oxide/InP (metal–insulator–semiconductor) structures were developed and investigations of the photovoltage and the...

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Bibliographic Details
Published in:Journal of applied spectroscopy 2022-11, Vol.89 (5), p.918-922
Main Authors: Shutaev, V. A., Grebenshchikova, E. A., Sidorov, V. G., Yakovlev, Yu. P.
Format: Article
Language:English
Subjects:
Analytical Chemistry
Atomic/Molecular Structure and Spectra
Chemical sensors
Decay rate
Gas mixtures
Hydrogen
Indium phosphides
MIS (semiconductors)
Palladium
Photoelectric effect
Photoelectric emission
Photoelectricity
Physics
Physics and Astronomy
Room temperature
Semiconductors
Sensors
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Summary:Тhe development of a photoelectrical hydrogen sensor without sensor element heating is presented. For the sensitive element of the hydrogen sensor the Pd/n-InP (Schottkie diode) and Pd/oxide/InP (metal–insulator–semiconductor) structures were developed and investigations of the photovoltage and the photocurrent of the structures depending on the hydrogen concentration in the range 0.1–100 vol.% in a nitrogen–hydrogen gas mixture were carried out. It is shown that the photovoltage and photocurrent decay rate and the hydrogen concentration are exponentially related to each other. The laboratory samples of sensor for hydrogen determination in the range 100–30,000 ppm which are able to operate at room temperature with response rate of 1–2 s are developed.
ISSN:0021-9037
1573-8647
DOI:10.1007/s10812-022-01448-9