Indium Bump Process for Low-Temperature Detectors and Readout

We describe an indium bump process applicable to our low-temperature detectors and associated readout. A titanium nitride under bump metallization layer is reactively sputtered onto wiring pads as a diffusion barrier and adhesion layer. Indium is thermally evaporated onto this layer at the desired t...

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Bibliographic Details
Published in:Journal of low temperature physics 2022-11, Vol.209 (3-4), p.293-298
Main Authors: Lucas, T. J., Biesecker, J. P., Doriese, W. B., Duff, S. M., Hilton, G. C., Ullom, J. N., Vissers, M. R., Schmidt, D. R.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Condensed Matter Physics
Detectors
Diffusion barriers
Diffusion layers
Indium
Low temperature
Low temperature physics
Magnetic Materials
Magnetism
Metallizing
Physics
Physics and Astronomy
Superconductors
Thickness
Titanium nitride
Wiring
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Description
Summary:We describe an indium bump process applicable to our low-temperature detectors and associated readout. A titanium nitride under bump metallization layer is reactively sputtered onto wiring pads as a diffusion barrier and adhesion layer. Indium is thermally evaporated onto this layer at the desired thickness for bump bonding. Patterning for both titanium nitride and indium layers is accomplished by liftoff techniques. The process flow is compatible with many processes utilized for the fabrication of low-temperature detectors and other superconductive devices.
ISSN:0022-2291
1573-7357
DOI:10.1007/s10909-022-02728-6