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Performance analysis of dielectric modulated underlap FD-SOI MOSFET for biomolecules detection

Effective biosensors are required to detect contagious viruses through a rapid test kit using electronic components. Field-effect transistor-based biosensors have been identified as potential candidates for label-free and rapid sensing applications. In this work, a dielectric modulated (DM) two-side...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2022-12, Vol.128 (12), Article 1104
Main Authors: Kumar, Saurabh, Chauhan, R. K.
Format: Article
Language:English
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Summary:Effective biosensors are required to detect contagious viruses through a rapid test kit using electronic components. Field-effect transistor-based biosensors have been identified as potential candidates for label-free and rapid sensing applications. In this work, a dielectric modulated (DM) two-side underlap gate ( U ) Field-Effect Transistor (FET) biosensor device with a single gate structure is investigated for the label-free electrical detection of biomolecules. For detecting the presence of biomolecules immobilized in the underlap region, the change in subthreshold slope (SS), ON current ( I ON ), ON current, OFF current ratio ( I ON / I OFF ), and transconductance (gm) of the device have been considered. The proposed device is investigated for different underlap lengths, and its impact on device sensitivity is analyzed. All the characteristic trends have been validated through device simulation.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-022-06260-y