Comparative study on the optical properties of group-V doped SiC nanoribbons

In this paper, the zigzag silicon carbide nanoribbons (ZSiCNRs) doped with group-V are studied in the first principles, especially the differences of the energy bands and optical properties with different substitutions are compared. Doping causes the band gap of ZSiCNRs to widen and its stability be...

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Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2022-10, Vol.284, p.115896, Article 115896
Main Authors: Li, Yi-Zhen, Sun, Ming-Yue, Yu, Xiao-Xia, Liu, Wei-Kai, Kong, Shuang-Shuang, Gong, Pei, Fang, Xiao-Yong
Format: Article
Language:English
Subjects:
Comparative studies
Doping
Electron orbitals
Energy bands
First principles
Nanoribbons
Nanotechnology devices
Optical properties
Photoelectricity
Physical properties
Silicon carbide
Structural stability
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Summary:In this paper, the zigzag silicon carbide nanoribbons (ZSiCNRs) doped with group-V are studied in the first principles, especially the differences of the energy bands and optical properties with different substitutions are compared. Doping causes the band gap of ZSiCNRs to widen and its stability becomes lower. The stability of the structure decreases with the increase of the doping atom radius. N atom doping is easier to achieve. The electron orbital coupling position of different doped atoms is different, which leads to the difference of impurity levels position. Doping can widen the spectral range of the photo-conductance peak in the UV region, and the dielectric response peak in the visible region appears blue shift. SbC-ZSiCNRs show significant photoelectric response in visible region. ZSiCNRs have a broad application prospects in the field of micro-nanodevices due to their excellent physical properties.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2022.115896