Comparative study on the optical properties of group-V doped SiC nanoribbons

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2022-10, Vol.284, p.115896, Article 115896
• Main Authors: Li, Yi-Zhen, Sun, Ming-Yue, Yu, Xiao-Xia, Liu, Wei-Kai, Kong, Shuang-Shuang, Gong, Pei, Fang, Xiao-Yong
• Format: Article
• Language: English
• Subjects: Comparative studies; Doping; Electron orbitals; Energy bands; First principles; Nanoribbons; Nanotechnology devices; Optical properties; Photoelectricity; Physical properties; Silicon carbide; Structural stability
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2022.115896

In this paper, the zigzag silicon carbide nanoribbons (ZSiCNRs) doped with group-V are studied in the first principles, especially the differences of the energy bands and optical properties with different substitutions are compared. Doping causes the band gap of ZSiCNRs to widen and its stability becomes lower. The stability of the structure decreases with the increase of the doping atom radius. N atom doping is easier to achieve. The electron orbital coupling position of different doped atoms is different, which leads to the difference of impurity levels position. Doping can widen the spectral range of the photo-conductance peak in the UV region, and the dielectric response peak in the visible region appears blue shift. SbC-ZSiCNRs show significant photoelectric response in visible region. ZSiCNRs have a broad application prospects in the field of micro-nanodevices due to their excellent physical properties.