A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash

In this letter, a Ni-Al alloy based metal induced lateral crystallization (MILC) process in a vertical Si channel, from 3-D NAND flash cell, is reported. Alloying Ni with Al improves NiSi2 nucleation, resulting in a favorable channel morphology after the silicide transport. We show that it is possib...

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Bibliographic Details
Published in:IEEE electron device letters 2022-12, Vol.43 (12), p.2085-2088
Main Authors: Ramesh, S., Banerjee, K., Opsomer, K., Rachita, I., Bastos, J. P., Soulie, J-Ph, Sebaai, F., Favia, P., Korytov, M., Richard, O., Breuil, L., Arreghini, A., Van Den Bosch, G., Rosmeulen, M.
Format: Article
Language:English
Subjects:
3-D NAND
Aluminum
Annealing
channel crystallization
Channel morphology
Crystallization
current conduction
metal induced lateral crystallization
Metals
Nickel alloys
Nickel base alloys
Nucleation
Performance evaluation
polysilicon
Silicides
Silicon
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Summary:In this letter, a Ni-Al alloy based metal induced lateral crystallization (MILC) process in a vertical Si channel, from 3-D NAND flash cell, is reported. Alloying Ni with Al improves NiSi2 nucleation, resulting in a favorable channel morphology after the silicide transport. We show that it is possible to achieve better ON-current and gate control over the existing Ni-only MILC process with no observable impact on the memory performance.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3212105