Design Considerations and Quantum Confinement Effect in Monolithic ε-Ge/InxGa1-xAs Nanoscale FinFETs Down to N5 Node

In this work, we have studied the effect of material parameters (indium (In) composition and doping), geometrical parameters [channel length {L} , fin width {W} , aspect ratio (AR)], and quantum confinement (QC) on the performance and operability of a \varepsilon -Ge /InxGa _{{1}-{x}} As hybrid C...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-12, Vol.69 (12), p.6616-6623
Main Authors: Joshi, Rutwik, Karthikeyan, Sengunthar, Hudait, Mantu K.
Format: Article
Language:English
Subjects:
Aspect ratio
CMOS
Composition
confinement (QC)
Doping
FinFETs
Germanium
Hybrid systems
Lattice matching
Leakage current
Nanoscale devices
Optoelectronics
Parameters
Performance evaluation
Photonic band gap
Quantum confinement
Tensile strain
tensile strained germanium
Threshold voltage
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Summary:In this work, we have studied the effect of material parameters (indium (In) composition and doping), geometrical parameters [channel length {L} , fin width {W} , aspect ratio (AR)], and quantum confinement (QC) on the performance and operability of a \varepsilon -Ge /InxGa _{{1}-{x}} As hybrid CMOS system. In this system, the In compositional InxGa _{{1}-{x}} As and tensile-strained Ge ( \varepsilon -Ge) grown on the InxGa _{{1}-{x}} As layer were used as n- and p-channel FinFETs, respectively. The In composition in InxGa _{{1}-{x}} As layer (lattice matched with graded InxAl _{{1}-{x}} As buffer) determines the amount of tensile strain in Ge. This hybrid system utilizes the benefits of metamorphic (InxGa _{{1}-{x}} As/InxAl _{{1}-{x}} As) as well as pseudomorphic ( \varepsilon -Ge/InxGa _{{1}-{x}} As) heteroepitaxy to create high-performance tunable complementary devices, suitable for 0.5 V CMOS operation. The device metrics such as, threshold voltage, ON-current ( {I}_{\text {on}} ), OFF-current ( {I}_{\text {off}} ), subthreshold-swing (SS), and drain-induced barrier lowering (DIBL), and their dependence on material and geometrical parameters were evaluated using self-consistent analytical solvers scaled down to the N5 node. At these scaled dimensions, this hybrid system demonstrated ultralow leakage current and SS for the n-FinFET and p-FinFET of 10 pA/ \mu \tex
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3212337