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Universal surface tailoring of perovskite nanocrystals via organic pseudohalide ligands applicable to green and blue light-emitting diodes
Proper management of surface defects in perovskite nanocrystals (PeNCs) has resulted in near-unity photoluminescence quantum yield and the development of high-performance light-emitting diodes (LEDs). However, most PeNCs still suffer from incomplete surface passivation, which results in non-ideal ef...
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Published in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-12, Vol.10 (48), p.18226-18233 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Proper management of surface defects in perovskite nanocrystals (PeNCs) has resulted in near-unity photoluminescence quantum yield and the development of high-performance light-emitting diodes (LEDs). However, most PeNCs still suffer from incomplete surface passivation, which results in non-ideal efficiencies. Herein, we devise a simple surface tailoring of CsPbBr
3
NCs with organic pseudohalide ligands, didodecyldimethylammonium tetrafluoroborate (DDA-BF
4
). Results suggest that the DDA cation and BF
4
anion simultaneously coordinated on the CsPbBr
3
NC surfaces, thereby dramatically improving optical properties and colloidal stability. With this passivation, surface-tailored CsPbBr
3
NCs were applied to green LEDs, which showed significantly higher external quantum efficiencies than LEDs with untreated PeNCs and stable electroluminescence (EL) at a wavelength of 516 nm. Also, when this method was applied to sky-blue LED based on CsPbBr
3−
x
Cl
x
NCs (EL at 484 nm), similar improvement in device performance was observed. We believe that organic pseudohalide treatment provides a universal methodology that can be applicable to green and blue PeNC-based LEDs, providing a promising platform for future displays and lighting technologies. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/D2TC04194D |