Effect of Large Uniaxial Stress on the Thermoelectric Properties of Microcrystalline Silicon Thin Films

This study reports on the behaviour of the thermoelectric properties of n- and p-type hydrogenated microcrystalline silicon thin films (µc-Si: H) as a function of applied uniaxial stress up to ±1.7%. µc-Si: H thin films were deposited via plasma enhanced chemical vapour deposition and thermoelectric...

Full description

Saved in:
Bibliographic Details
Published in:Electronics (Basel) 2022-12, Vol.11 (24), p.4085
Main Authors: Acosta, Edwin, Smirnov, Vladimir, Szabo, Peter S. B., Pillajo, Christian, De la Cadena, Erick, Bennett, Nick S.
Format: Article
Language:English
Subjects:
Analysis
Annealing
Bending
Composition
Compressive properties
Dielectric films
Doped films
Electric properties
Electrical resistivity
Glass substrates
High temperature
Mechanical properties
Methods
Plasma enhanced chemical vapor deposition
Power factor
Seebeck effect
Semiconductors
Silicon
Silicon films
Temperature
Thermal properties
Thermoelectricity
Thin films
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study reports on the behaviour of the thermoelectric properties of n- and p-type hydrogenated microcrystalline silicon thin films (µc-Si: H) as a function of applied uniaxial stress up to ±1.7%. µc-Si: H thin films were deposited via plasma enhanced chemical vapour deposition and thermoelectric properties were obtained through annealing at 200 °C (350 °C) for n-(p-) type samples, before the bending experiments. Tensile (compressive) stress was effective to increase the electrical conductivity of n-(p-) type samples. Likewise, stress induced changes in the Seebeck coefficient, however, showing an improvement only in electron-doped films under compressive stress. Overall, the addition of elevated temperature to the bending experiments resulted in a decrease in the mechanical stability of the films. These trends did not produce a significant enhancement of the overall thermoelectric power factor, rather it was largely preserved in all cases.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics11244085