Numerical Modelling on the Effect of Temperature on MOCVD Growth of ZnO Using Diethylzinc and Tertiarybutanol

The dynamic growth of MOCVD-grown ZnO thin films under temperature effect was systematically investigated by a numerical approach using computational fluid dynamics (CFD) technique. A three-dimensional (3D) reactor-scale model was developed to determine the growth rate and uniformity of ZnO thin fil...

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Bibliographic Details
Published in:Coatings (Basel) 2022-12, Vol.12 (12), p.1991
Main Authors: Wu, Yiyi, Wu, Rui, Zhou, Xiaosong, Wang, Hongli, Hu, Yang, Nie, Dengpan, Bao, Dongmei
Format: Article
Language:English
Subjects:
Admixtures
Boundary conditions
Chemical reactions
Chemical vapor deposition
Computational fluid dynamics
Dielectric films
Fluid dynamics
Gas flow
Gases
Heat
II-VI semiconductors
Mathematical models
Metalorganic chemical vapor deposition
Nitrogen
Numerical analysis
Organic chemicals
Photovoltaic cells
Reynolds number
Rolls
Scale models
Simulation
Simulation methods
Temperature effects
Thickness
Thin films
Three dimensional models
Zinc oxide
Zinc oxides
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Summary:The dynamic growth of MOCVD-grown ZnO thin films under temperature effect was systematically investigated by a numerical approach using computational fluid dynamics (CFD) technique. A three-dimensional (3D) reactor-scale model was developed to determine the growth rate and uniformity of ZnO thin film in the temperature range of 593 K to 713 K. The mixed-convection flow and heat transfer inside the reactor chamber were assessed. The results showed that as the temperature increased, ZnO thickness increased initially before decreasing. At 673 K, the highest deposition rate with acceptable uniformity was achieved. The admixture of transverse and longitudinal rolls was observed for the flow conditions. Temperature variations were found to directly affect the axial and lateral uniformity of deposition, but had a minor impact on the size and position of transverse rolls. Experimental verification studies were conducted, and high-quality ZnO films were successfully fabricated by using diethylzinc (DEZn) and tertiarybutanol (t-BuOH) as precursors; it was found that the comprehensive thickness and structural properties of ZnO deposited at temperature of 673 K are preferred. Experimental results and numerical simulations exhibited good agreement.
ISSN:2079-6412
2079-6412
DOI:10.3390/coatings12121991