Study of gain, noise, and collection efficiency of GaAs SAM-APDs single pixel

III-V-compound semiconductors offer many advantages over silicon-based technologies traditionally used in solid-state photodetectors, especially in hard X-ray applications that require high detection efficiency and short response times. Amongst them, gallium arsenide (GaAs) has very promising charac...

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Bibliographic Details
Published in:Journal of instrumentation 2022-12, Vol.17 (12), p.C12020
Main Authors: Colja, M., Cautero, M., Menk, R.H., Palestri, P., Gianoncelli, A., Antonelli, M., Biasiol, G., Zilio, S.D., Steinhartova, T., Nichetti, C., Arfelli, F., De Angelis, D., Driussi, F., Bonanni, V., Pilotto, A., Gariani, G., Carrato, S., Cautero, G.
Format: Article
Language:English
Subjects:
Avalanche diodes
Charge efficiency
Collection
Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
Efficiency
Gallium arsenide
Group III-V semiconductors
Molecular beam epitaxy
Photodiodes
Solid state detectors
Synchrotron radiation
Synchrotrons
Thickness
X ray absorption
X-ray detectors
X-rays
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Summary:III-V-compound semiconductors offer many advantages over silicon-based technologies traditionally used in solid-state photodetectors, especially in hard X-ray applications that require high detection efficiency and short response times. Amongst them, gallium arsenide (GaAs) has very promising characteristics in terms of X-ray absorption and high carrier velocity. Furthermore, implementing charge-multiplication mechanisms within the sensor may become of critical importance in cases where the photogenerated signal needs an intrinsic amplification before being acquired by the front-end electronics. This work reports on the experimental characterization by means of lasers and synchrotron radiation of gain, noise, and charge collection efficiencies of GaAs avalanche photodiodes (APDs), realized by molecular beam epitaxy (MBE), featuring separate absorption and multiplication regions (SAM) and different absorption region thicknesses. These devices have been fabricated to investigate the role of the thickness of the absorption region and of possible traps or defects at the metal-semiconductor interfaces in the collection efficiency in order to lay the groundwork for the future development of thicker GaAs devices for detection of hard X-rays.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/17/12/C12020