Realization of Outstanding Stable 1S1R Behavior Based on Al-Doped NbOx

In this study, we proposed a remarkable one-selector one-resistor (1S1R) device with a single Al-doped NbOx layer, which performed reasonable resistance and switching voltages without degeneration, implying robust stability and outstanding uniformity. The measurements of dc and ac modes were applied...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-01, Vol.70 (1), p.65
Main Authors: Yang, Gaoqi, Chen, Ao, Liu, Nengfan, Ma, Guokun, Lin, Zhennan, Fu, Yuyang, Zhao, Xiaohu, Rao, Yiheng, Li, Tao, Wan, Houzhao, Duan, Jinxia, Shen, Liangping, Sun, Peng, Yang, Daohong, Wang, Hao
Format: Article
Language:English
Subjects:
Conduction model
Degeneration
Filaments
First principles
Stability
Switching
Online Access:Get full text
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Summary:In this study, we proposed a remarkable one-selector one-resistor (1S1R) device with a single Al-doped NbOx layer, which performed reasonable resistance and switching voltages without degeneration, implying robust stability and outstanding uniformity. The measurements of dc and ac modes were applied to confirm the nonvolatility and effective storage performance. Besides that, a conduction model based on the results of the first principles calculations was proposed to explain the reason for the oxygen vacancies were generated more and tended to the cluster. Meanwhile, they were easier to migrate in Al-doped due to a lower barrier. These contributed to achieving stable conductive filaments as well as the switching process and improve uniformity and stability. Consequently, we developed an excellent 1S1R without an independent rectified cell, which has the potential for 3-D architecture.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3224093